Magnetic skyrmion field-effect transistors

Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a gate-controlled Dzyaloshinskii-Moriya interaction. A key working prin...

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Veröffentlicht in:	Applied physics letters 2019-08, Vol.115 (7)
Hauptverfasser:	Hong, Ik-Sun, Lee, Kyung-Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Boolean algebra Boolean functions Field effect transistors Hall effect Hypothetical particles Low currents Memory devices Particle theory Semiconductor devices Solitary waves Transistors
Online-Zugang:	Volltext
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