Theoretical prediction and experimental demonstration of inter-valley scattering induced Inverse Spin Hall effect for hot electrons in GaAs

Realization of the Inverse Spin Hall Effect (ISHE) with hot electrons in direct bandgap semiconductors is an intriguing puzzle. Here, we report the influence of steady state carrier accumulation in the satellite L valley on the establishment of ISHE in the GaAs epilayer. Steady state carrier accumul...

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Veröffentlicht in:	Journal of applied physics 2019-08, Vol.126 (6)
Hauptverfasser:	Mudi, Priyabrata, Khamari, Shailesh K., Sharma, T. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulation Applied physics Conduction bands Electromagnetism Electron spin Gallium arsenide Hall effect Holes (electron deficiencies) Hot electrons Mathematical analysis Predictions Scattering Steady state
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