Reactive intercalation and oxidation at the buried graphene-germanium interface
We explore a number of different electrochemical, wet chemical, and gas phase approaches to study intercalation and oxidation at the buried graphene-Ge interface. While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularl...
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| Veröffentlicht in: | APL materials 2019-07, Vol.7 (7), p.071107-071107-8 |
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| container_end_page | 071107-8 |
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| creator | Braeuninger-Weimer, Philipp Burton, Oliver Weatherup, Robert S. Wang, Ruizhi Dudin, Pavel Brennan, Barry Pollard, Andrew J. Bayer, Bernhard C. Veigang-Radulescu, Vlad P. Meyer, Jannik C. Murdoch, Billy J. Cumpson, Peter J. Hofmann, Stephan |
| description | We explore a number of different electrochemical, wet chemical, and gas phase approaches to study intercalation and oxidation at the buried graphene-Ge interface. While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid, this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy, and time-of-flight secondary ion mass spectrometry show that the monolayer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the as-grown Ge oxide, and we discuss how these insights can be utilized for new processing approaches. |
| doi_str_mv | 10.1063/1.5098351 |
| format | Article |
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While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid, this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy, and time-of-flight secondary ion mass spectrometry show that the monolayer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the as-grown Ge oxide, and we discuss how these insights can be utilized for new processing approaches.</abstract><pub>AIP Publishing LLC</pub><doi>10.1063/1.5098351</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-6375-1459</orcidid><orcidid>https://orcid.org/0000-0002-3993-9045</orcidid><orcidid>https://orcid.org/0000-0001-8677-1647</orcidid><oa>free_for_read</oa></addata></record> |
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| title | Reactive intercalation and oxidation at the buried graphene-germanium interface |
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