Silicon photonic crystal cavities at near band-edge wavelengths

We demonstrate photonic crystal L3 cavities with a resonant wavelength of around 1.078 μm on an undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons. We have optimised a fabrication recipe using readily available process materials such as polyme...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2019-03, Vol.114 (9)
Hauptverfasser: Nur, Salahuddin, Lim, Hee-Jin, Elzerman, Jeroen, Morton, John J. L.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 9
container_start_page
container_title Applied physics letters
container_volume 114
creator Nur, Salahuddin
Lim, Hee-Jin
Elzerman, Jeroen
Morton, John J. L.
description We demonstrate photonic crystal L3 cavities with a resonant wavelength of around 1.078 μm on an undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons. We have optimised a fabrication recipe using readily available process materials such as polymethyl methacrylate as a soft electron-beam mask and a Chemical Vapour Deposition grown oxide layer as a hard mask. Our bilayer resist technique efficiently produces photonic crystal cavities with a quality factor (Q) of ∼5000 at a wavelength of 1.078 μm, measured using cavity reflection measurements at room temperature. We observe a decrease in Q as the cavity resonance shifts to shorter wavelengths ( Q ≲ 3000 at wavelengths
doi_str_mv 10.1063/1.5067358
format Article
fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_5067358</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2187690277</sourcerecordid><originalsourceid>FETCH-LOGICAL-c362t-219f53d642b0099bf1f5a95eb302910829dc757b7270545a6802c8680cd60a393</originalsourceid><addsrcrecordid>eNqd0E1LAzEQBuAgCtbqwX-w4Elh6yRpks1JpPgFBQ_qOWSz2TZlTdYkXem_d6UF715mGHh4B16ELjHMMHB6i2cMuKCsOkITDEKUFOPqGE0AgJZcMnyKzlLajCcjlE7Q3ZvrnAm-6NchB-9MYeIuZd0VRg8uO5sKnQtvdSxq7ZvSNitbfOvBdtav8jqdo5NWd8leHPYUfTw-vC-ey-Xr08viflkaykkuCZYtow2fkxpAyrrFLdOS2ZoCkRgqIhsjmKgFEcDmTPMKiKnGaRoOmko6RVf73D6Gr61NWW3CNvrxpSK4ElwCEWJU13tlYkgp2lb10X3quFMY1G8_CqtDP6O92dtkXNbZBf8_PIT4B1XftPQHLuNxhw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2187690277</pqid></control><display><type>article</type><title>Silicon photonic crystal cavities at near band-edge wavelengths</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Nur, Salahuddin ; Lim, Hee-Jin ; Elzerman, Jeroen ; Morton, John J. L.</creator><creatorcontrib>Nur, Salahuddin ; Lim, Hee-Jin ; Elzerman, Jeroen ; Morton, John J. L.</creatorcontrib><description>We demonstrate photonic crystal L3 cavities with a resonant wavelength of around 1.078 μm on an undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons. We have optimised a fabrication recipe using readily available process materials such as polymethyl methacrylate as a soft electron-beam mask and a Chemical Vapour Deposition grown oxide layer as a hard mask. Our bilayer resist technique efficiently produces photonic crystal cavities with a quality factor (Q) of ∼5000 at a wavelength of 1.078 μm, measured using cavity reflection measurements at room temperature. We observe a decrease in Q as the cavity resonance shifts to shorter wavelengths ( Q ≲ 3000 at wavelengths &lt;1.070 μm), which is mostly due to the intrinsic absorption of silicon.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5067358</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Chemical vapor deposition ; Electron beams ; Holes ; Organic chemistry ; Photonic crystals ; Polymethyl methacrylate ; Q factors ; Quantum theory ; Silicon ; Spontaneous emission ; Wavelengths</subject><ispartof>Applied physics letters, 2019-03, Vol.114 (9)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-219f53d642b0099bf1f5a95eb302910829dc757b7270545a6802c8680cd60a393</citedby><cites>FETCH-LOGICAL-c362t-219f53d642b0099bf1f5a95eb302910829dc757b7270545a6802c8680cd60a393</cites><orcidid>0000-0002-2700-7769</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5067358$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Nur, Salahuddin</creatorcontrib><creatorcontrib>Lim, Hee-Jin</creatorcontrib><creatorcontrib>Elzerman, Jeroen</creatorcontrib><creatorcontrib>Morton, John J. L.</creatorcontrib><title>Silicon photonic crystal cavities at near band-edge wavelengths</title><title>Applied physics letters</title><description>We demonstrate photonic crystal L3 cavities with a resonant wavelength of around 1.078 μm on an undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons. We have optimised a fabrication recipe using readily available process materials such as polymethyl methacrylate as a soft electron-beam mask and a Chemical Vapour Deposition grown oxide layer as a hard mask. Our bilayer resist technique efficiently produces photonic crystal cavities with a quality factor (Q) of ∼5000 at a wavelength of 1.078 μm, measured using cavity reflection measurements at room temperature. We observe a decrease in Q as the cavity resonance shifts to shorter wavelengths ( Q ≲ 3000 at wavelengths &lt;1.070 μm), which is mostly due to the intrinsic absorption of silicon.</description><subject>Applied physics</subject><subject>Chemical vapor deposition</subject><subject>Electron beams</subject><subject>Holes</subject><subject>Organic chemistry</subject><subject>Photonic crystals</subject><subject>Polymethyl methacrylate</subject><subject>Q factors</subject><subject>Quantum theory</subject><subject>Silicon</subject><subject>Spontaneous emission</subject><subject>Wavelengths</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCtbqwX-w4Elh6yRpks1JpPgFBQ_qOWSz2TZlTdYkXem_d6UF715mGHh4B16ELjHMMHB6i2cMuKCsOkITDEKUFOPqGE0AgJZcMnyKzlLajCcjlE7Q3ZvrnAm-6NchB-9MYeIuZd0VRg8uO5sKnQtvdSxq7ZvSNitbfOvBdtav8jqdo5NWd8leHPYUfTw-vC-ey-Xr08viflkaykkuCZYtow2fkxpAyrrFLdOS2ZoCkRgqIhsjmKgFEcDmTPMKiKnGaRoOmko6RVf73D6Gr61NWW3CNvrxpSK4ElwCEWJU13tlYkgp2lb10X3quFMY1G8_CqtDP6O92dtkXNbZBf8_PIT4B1XftPQHLuNxhw</recordid><startdate>20190304</startdate><enddate>20190304</enddate><creator>Nur, Salahuddin</creator><creator>Lim, Hee-Jin</creator><creator>Elzerman, Jeroen</creator><creator>Morton, John J. L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2700-7769</orcidid></search><sort><creationdate>20190304</creationdate><title>Silicon photonic crystal cavities at near band-edge wavelengths</title><author>Nur, Salahuddin ; Lim, Hee-Jin ; Elzerman, Jeroen ; Morton, John J. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-219f53d642b0099bf1f5a95eb302910829dc757b7270545a6802c8680cd60a393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Chemical vapor deposition</topic><topic>Electron beams</topic><topic>Holes</topic><topic>Organic chemistry</topic><topic>Photonic crystals</topic><topic>Polymethyl methacrylate</topic><topic>Q factors</topic><topic>Quantum theory</topic><topic>Silicon</topic><topic>Spontaneous emission</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nur, Salahuddin</creatorcontrib><creatorcontrib>Lim, Hee-Jin</creatorcontrib><creatorcontrib>Elzerman, Jeroen</creatorcontrib><creatorcontrib>Morton, John J. L.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nur, Salahuddin</au><au>Lim, Hee-Jin</au><au>Elzerman, Jeroen</au><au>Morton, John J. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon photonic crystal cavities at near band-edge wavelengths</atitle><jtitle>Applied physics letters</jtitle><date>2019-03-04</date><risdate>2019</risdate><volume>114</volume><issue>9</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We demonstrate photonic crystal L3 cavities with a resonant wavelength of around 1.078 μm on an undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons. We have optimised a fabrication recipe using readily available process materials such as polymethyl methacrylate as a soft electron-beam mask and a Chemical Vapour Deposition grown oxide layer as a hard mask. Our bilayer resist technique efficiently produces photonic crystal cavities with a quality factor (Q) of ∼5000 at a wavelength of 1.078 μm, measured using cavity reflection measurements at room temperature. We observe a decrease in Q as the cavity resonance shifts to shorter wavelengths ( Q ≲ 3000 at wavelengths &lt;1.070 μm), which is mostly due to the intrinsic absorption of silicon.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5067358</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-2700-7769</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2019-03, Vol.114 (9)
issn 0003-6951
1077-3118
language eng
recordid cdi_scitation_primary_10_1063_1_5067358
source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Chemical vapor deposition
Electron beams
Holes
Organic chemistry
Photonic crystals
Polymethyl methacrylate
Q factors
Quantum theory
Silicon
Spontaneous emission
Wavelengths
title Silicon photonic crystal cavities at near band-edge wavelengths
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T15%3A02%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Silicon%20photonic%20crystal%20cavities%20at%20near%20band-edge%20wavelengths&rft.jtitle=Applied%20physics%20letters&rft.au=Nur,%20Salahuddin&rft.date=2019-03-04&rft.volume=114&rft.issue=9&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.5067358&rft_dat=%3Cproquest_scita%3E2187690277%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2187690277&rft_id=info:pmid/&rfr_iscdi=true