Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)

Proton irradiation-induced effects on AlGaN/GaN high electron mobility transistors (HEMTs) were studied by emulating a certain space radiation environment (upstream of the earth's bow shock) using a relatively low energy (100 keV) proton beam with fluences of 1 × 1010, 1 × 1012, and 1 × 1014 pr...

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Veröffentlicht in:	Journal of applied physics 2018-12, Vol.124 (21)
Hauptverfasser:	Khanal, Min P., Uprety, Sunil, Mirkhani, Vahid, Wang, Shiqiang, Yapabandara, Kosala, Hassani, Ehsan, Isaacs-Smith, Tamara, Ahyi, Ayayi C., Bozack, Michael J., Oh, Tae-Sik, Park, Minseo
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied physics Carrier density Charge density Current carriers Electrical measurement Extraterrestrial radiation Fluence High electron mobility transistors Optical properties Proton beams Proton irradiation Radiation effects Raman spectroscopy Semiconductor devices Strain relaxation Threshold voltage Transistors
Online-Zugang:	Volltext
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