Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface

Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe2-WSe2 junction have be...

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Veröffentlicht in:	Applied physics letters 2018-12, Vol.113 (24)
Hauptverfasser:	Chu, Yu-Hsun, Wang, Li-Hong, Lee, Shin-Ye, Chen, Hou-Ju, Yang, Po-Ya, Butler, Christopher J., Lu, Li-Syuan, Yeh, Han, Chang, Wen-Hao, Lin, Minn-Tsong
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier density Depletion Electric fields Electronic devices Heterojunctions Transition metal compounds
Online-Zugang:	Volltext
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