Black phosphorus with a unique rectangular shape and its anisotropic properties
Black Phosphorus (BP) is a 2D material with high hole mobility. However, due to its fast degradation property under ambient air, fast crystal orientation determination is required for the fabrication of BP transistor along the crystal orientation with the highest mobility. In this paper, a method fo...
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| Veröffentlicht in: | AIP advances 2018-10, Vol.8 (10), p.105216-105216-7 |
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| container_end_page | 105216-7 |
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| creator | Hsiao, Yao Chang, Po-Yen Fan, Kai-Lin Hsu, Ning-Chun Lee, Si-Chen |
| description | Black Phosphorus (BP) is a 2D material with high hole mobility. However, due to its fast degradation property under ambient air, fast crystal orientation determination is required for the fabrication of BP transistor along the crystal orientation with the highest mobility. In this paper, a method for producing BP flakes with a special rectangular shape was developed. This shape provides important information about the crystal orientation of BP. By using polarized Raman measurements, it was demonstrated that the Raman peak ratios of two specific lattice vibration modes would change from 2 to 1 when the polarized laser light is parallel to armchair (AC) and zigzag (ZZ) orientations of BP. In addition, by using the rectangular BP, the mobility in the AC direction was measured to be larger than that in the ZZ direction by a factor of 2. The BP transistor with hexagonal boron nitride (h-BN) encapsulation on both top and bottom sides were also fabricated to avoid the degradation and improve the device performance. |
| doi_str_mv | 10.1063/1.5049783 |
| format | Article |
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However, due to its fast degradation property under ambient air, fast crystal orientation determination is required for the fabrication of BP transistor along the crystal orientation with the highest mobility. In this paper, a method for producing BP flakes with a special rectangular shape was developed. This shape provides important information about the crystal orientation of BP. By using polarized Raman measurements, it was demonstrated that the Raman peak ratios of two specific lattice vibration modes would change from 2 to 1 when the polarized laser light is parallel to armchair (AC) and zigzag (ZZ) orientations of BP. In addition, by using the rectangular BP, the mobility in the AC direction was measured to be larger than that in the ZZ direction by a factor of 2. 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However, due to its fast degradation property under ambient air, fast crystal orientation determination is required for the fabrication of BP transistor along the crystal orientation with the highest mobility. In this paper, a method for producing BP flakes with a special rectangular shape was developed. This shape provides important information about the crystal orientation of BP. By using polarized Raman measurements, it was demonstrated that the Raman peak ratios of two specific lattice vibration modes would change from 2 to 1 when the polarized laser light is parallel to armchair (AC) and zigzag (ZZ) orientations of BP. In addition, by using the rectangular BP, the mobility in the AC direction was measured to be larger than that in the ZZ direction by a factor of 2. The BP transistor with hexagonal boron nitride (h-BN) encapsulation on both top and bottom sides were also fabricated to avoid the degradation and improve the device performance.</description><subject>Boron nitride</subject><subject>Crystal structure</subject><subject>Degradation</subject><subject>Hole mobility</subject><subject>Lattice vibration</subject><subject>Orientation</subject><subject>Phosphorus</subject><subject>Transistors</subject><subject>Vibration mode</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqdkEtLAzEUhQdRUGoX_oOAK4XWJJPJJEstvkDoRtfhNo82tU7GJKP47422qGsvhBPCx8k9p6pOCJ4SzOsLMm0wk62o96ojShoxqSnl-3_uh9U4pTUuwyTBgh1V86sN6GfUr0IqJw4Jvfu8QoCGzr8OFkWrM3TLYQMRpRX0FkFnkM-pqE8hx9B7jfoiNmZv03F14GCT7Hino-rp5vpxdjd5mN_ezy4fJppRkSegMdVG1rYVxmCwDPPGuJpbaJzjJQPDmIqmrg3jpCQC42Tj-ELzhZOC6npU3W99TYC16qN_gfihAnj1_RDiUkFZSG-sEhKcaFqp9UKwZsGl1aQ4c25o27oWitfp1qvEKJlTVuswxK6sryghskzLaKHOtpSOIaVo3c-vBKuv-hVRu_oLe75lk_YZsg_d_-C3EH9B1ZeGPgHOa5L1</recordid><startdate>201810</startdate><enddate>201810</enddate><creator>Hsiao, Yao</creator><creator>Chang, Po-Yen</creator><creator>Fan, Kai-Lin</creator><creator>Hsu, Ning-Chun</creator><creator>Lee, Si-Chen</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0003-3400-5240</orcidid></search><sort><creationdate>201810</creationdate><title>Black phosphorus with a unique rectangular shape and its anisotropic properties</title><author>Hsiao, Yao ; Chang, Po-Yen ; Fan, Kai-Lin ; Hsu, Ning-Chun ; Lee, Si-Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-ac02cd93e78dd0ae4065df36ea5ff649740028533d461978adf95f6bc6bf982c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Boron nitride</topic><topic>Crystal structure</topic><topic>Degradation</topic><topic>Hole mobility</topic><topic>Lattice vibration</topic><topic>Orientation</topic><topic>Phosphorus</topic><topic>Transistors</topic><topic>Vibration mode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsiao, Yao</creatorcontrib><creatorcontrib>Chang, Po-Yen</creatorcontrib><creatorcontrib>Fan, Kai-Lin</creatorcontrib><creatorcontrib>Hsu, Ning-Chun</creatorcontrib><creatorcontrib>Lee, Si-Chen</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsiao, Yao</au><au>Chang, Po-Yen</au><au>Fan, Kai-Lin</au><au>Hsu, Ning-Chun</au><au>Lee, Si-Chen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Black phosphorus with a unique rectangular shape and its anisotropic properties</atitle><jtitle>AIP advances</jtitle><date>2018-10</date><risdate>2018</risdate><volume>8</volume><issue>10</issue><spage>105216</spage><epage>105216-7</epage><pages>105216-105216-7</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Black Phosphorus (BP) is a 2D material with high hole mobility. However, due to its fast degradation property under ambient air, fast crystal orientation determination is required for the fabrication of BP transistor along the crystal orientation with the highest mobility. In this paper, a method for producing BP flakes with a special rectangular shape was developed. This shape provides important information about the crystal orientation of BP. By using polarized Raman measurements, it was demonstrated that the Raman peak ratios of two specific lattice vibration modes would change from 2 to 1 when the polarized laser light is parallel to armchair (AC) and zigzag (ZZ) orientations of BP. In addition, by using the rectangular BP, the mobility in the AC direction was measured to be larger than that in the ZZ direction by a factor of 2. The BP transistor with hexagonal boron nitride (h-BN) encapsulation on both top and bottom sides were also fabricated to avoid the degradation and improve the device performance.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5049783</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-3400-5240</orcidid><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Boron nitride Crystal structure Degradation Hole mobility Lattice vibration Orientation Phosphorus Transistors Vibration mode |
| title | Black phosphorus with a unique rectangular shape and its anisotropic properties |
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