Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES

In this contribution, the measurement of the hydrogen concentration in thin passivating amorphous silicon (a-Si:H) layers using Glow Discharge Optical Emission Spectroscopy (GD-OES) is suggested. Usually GD-OES hydrogen measurements suffer from additional signals from atmospheric contaminations, esp...

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Hauptverfasser:	Linke, Jonathan, Hahn, Giso, Terheiden, Barbara
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amorphous silicon Buffer layers Contamination Glow discharges Optical emission spectroscopy Thin films
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creator	Linke, Jonathan Hahn, Giso Terheiden, Barbara
description	In this contribution, the measurement of the hydrogen concentration in thin passivating amorphous silicon (a-Si:H) layers using Glow Discharge Optical Emission Spectroscopy (GD-OES) is suggested. Usually GD-OES hydrogen measurements suffer from additional signals from atmospheric contaminations, especially from H2O desorbed on the surfaces of such thin layers. This issue is addressed by the deposition of a hydrogen-free copper buffer layer on top, which provides a delay between sputtering the sample surface and the a-Si:H layer itself. Thus the signals from the atmospheric contaminations and from the a-Si:H layer itself are separated. The contamination-free hydrogen signals of the thin a-Si:H layers are eventually calibrated to average hydrogen concentrations.
doi_str_mv	10.1063/1.5049260
format	Conference Proceeding
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subjects	Amorphous silicon Buffer layers Contamination Glow discharges Optical emission spectroscopy Thin films
title	Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES
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