Low-resistive tin (II) sulfide thin films for nontoxic and low-cost solar cell devices
Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (ITO) substrates by using thermal evaporation technique at optimized deposition conditions. Here, SnS films were deposited at a substrate temperature of 300 °C by maintaining 14 cm distance between sour...
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creator | Reddy, L. Raja Mohan Devika, M. Reddy, N. Koteeswara Gunasekhar, K. R. Ramesh, K. |
description | Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (ITO) substrates by using thermal evaporation technique at optimized deposition conditions. Here, SnS films were deposited at a substrate temperature of 300 °C by maintaining 14 cm distance between source to substrates with a rate of deposition of 1-2 nms−1 and film thickness of 500 nm. Then, the crystal structure, morphology, electrical, and optical properties along with chemical composition of SnS films have been investigated and discussed in view of their potential applications in photovoltaic technology. The obtained results reveal that SnS films grown on ITO substrates have (111) as preferential orientation crystals with different sizes. These films are highly rough-in surface morphology, and exhibited very low-electrical resistivity in the order of 10−3 Ωcm. These films also exhibited direct optical band gap and transmittance of about 60%. From these investigations we emphasized that SnS films deposited on ITO substrates could be adopted as an absorber layer for the development of solar cell devices or active component for other multifunctional devices. |
doi_str_mv | 10.1063/1.5047968 |
format | Conference Proceeding |
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Raja Mohan ; Devika, M. ; Reddy, N. Koteeswara ; Gunasekhar, K. R. ; Ramesh, K.</creator><contributor>Rao, K. Ramachandra ; Suneetha, J. ; Krishna, D. ; Ramana, C. V.</contributor><creatorcontrib>Reddy, L. Raja Mohan ; Devika, M. ; Reddy, N. Koteeswara ; Gunasekhar, K. R. ; Ramesh, K. ; Rao, K. Ramachandra ; Suneetha, J. ; Krishna, D. ; Ramana, C. V.</creatorcontrib><description>Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (ITO) substrates by using thermal evaporation technique at optimized deposition conditions. Here, SnS films were deposited at a substrate temperature of 300 °C by maintaining 14 cm distance between source to substrates with a rate of deposition of 1-2 nms−1 and film thickness of 500 nm. Then, the crystal structure, morphology, electrical, and optical properties along with chemical composition of SnS films have been investigated and discussed in view of their potential applications in photovoltaic technology. The obtained results reveal that SnS films grown on ITO substrates have (111) as preferential orientation crystals with different sizes. These films are highly rough-in surface morphology, and exhibited very low-electrical resistivity in the order of 10−3 Ωcm. These films also exhibited direct optical band gap and transmittance of about 60%. From these investigations we emphasized that SnS films deposited on ITO substrates could be adopted as an absorber layer for the development of solar cell devices or active component for other multifunctional devices.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.5047968</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Chemical composition ; Crystal structure ; Deposition ; Film thickness ; Indium tin oxides ; Morphology ; Optical properties ; Organic chemistry ; Photovoltaic cells ; Solar cells ; Substrates ; Thin films ; Tin oxides</subject><ispartof>AIP conference proceedings, 2018, Vol.1992 (1)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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R.</creatorcontrib><creatorcontrib>Ramesh, K.</creatorcontrib><title>Low-resistive tin (II) sulfide thin films for nontoxic and low-cost solar cell devices</title><title>AIP conference proceedings</title><description>Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (ITO) substrates by using thermal evaporation technique at optimized deposition conditions. Here, SnS films were deposited at a substrate temperature of 300 °C by maintaining 14 cm distance between source to substrates with a rate of deposition of 1-2 nms−1 and film thickness of 500 nm. Then, the crystal structure, morphology, electrical, and optical properties along with chemical composition of SnS films have been investigated and discussed in view of their potential applications in photovoltaic technology. The obtained results reveal that SnS films grown on ITO substrates have (111) as preferential orientation crystals with different sizes. These films are highly rough-in surface morphology, and exhibited very low-electrical resistivity in the order of 10−3 Ωcm. These films also exhibited direct optical band gap and transmittance of about 60%. From these investigations we emphasized that SnS films deposited on ITO substrates could be adopted as an absorber layer for the development of solar cell devices or active component for other multifunctional devices.</description><subject>Chemical composition</subject><subject>Crystal structure</subject><subject>Deposition</subject><subject>Film thickness</subject><subject>Indium tin oxides</subject><subject>Morphology</subject><subject>Optical properties</subject><subject>Organic chemistry</subject><subject>Photovoltaic cells</subject><subject>Solar cells</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Tin oxides</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kEtLAzEUhYMoWKsL_0HAjQpTbyaZycxSio9CwY2Ku5DmgSnTyZiko_57Iy24c3Xh8J1zuAehcwIzAjW9IbMKGG_r5gBNSFWRgtekPkQTgJYVJaNvx-gkxjVA2XLeTNDr0n8WwUQXkxsNTq7Hl4vFFY7bzjqdhfesWNdtIrY-4N73yX85hWWvcZetyseEo-9kwMp0HdZmdMrEU3RkZRfN2f5O0cv93fP8sVg-PSzmt8tiKCuaCqPsquUAVrKaEs5121DLKpC1NYwYDapi1AKVrVXWgsyYXRHNKCgmgSg6RRe73CH4j62JSaz9NvS5UpTQ1PlJ0tBMXe-oqFySyfleDMFtZPgWBMTvboKI_W7_waMPf6AYtKU_uJxuWw</recordid><startdate>20180803</startdate><enddate>20180803</enddate><creator>Reddy, L. Raja Mohan</creator><creator>Devika, M.</creator><creator>Reddy, N. Koteeswara</creator><creator>Gunasekhar, K. R.</creator><creator>Ramesh, K.</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180803</creationdate><title>Low-resistive tin (II) sulfide thin films for nontoxic and low-cost solar cell devices</title><author>Reddy, L. Raja Mohan ; Devika, M. ; Reddy, N. Koteeswara ; Gunasekhar, K. R. ; Ramesh, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p253t-ecfb9700fa463177d983f450a6fe41ed0c543f03a9fcff0aa46fb1d430c4a01c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Chemical composition</topic><topic>Crystal structure</topic><topic>Deposition</topic><topic>Film thickness</topic><topic>Indium tin oxides</topic><topic>Morphology</topic><topic>Optical properties</topic><topic>Organic chemistry</topic><topic>Photovoltaic cells</topic><topic>Solar cells</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Tin oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Reddy, L. Raja Mohan</creatorcontrib><creatorcontrib>Devika, M.</creatorcontrib><creatorcontrib>Reddy, N. Koteeswara</creatorcontrib><creatorcontrib>Gunasekhar, K. R.</creatorcontrib><creatorcontrib>Ramesh, K.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Reddy, L. Raja Mohan</au><au>Devika, M.</au><au>Reddy, N. Koteeswara</au><au>Gunasekhar, K. R.</au><au>Ramesh, K.</au><au>Rao, K. Ramachandra</au><au>Suneetha, J.</au><au>Krishna, D.</au><au>Ramana, C. V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low-resistive tin (II) sulfide thin films for nontoxic and low-cost solar cell devices</atitle><btitle>AIP conference proceedings</btitle><date>2018-08-03</date><risdate>2018</risdate><volume>1992</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (ITO) substrates by using thermal evaporation technique at optimized deposition conditions. Here, SnS films were deposited at a substrate temperature of 300 °C by maintaining 14 cm distance between source to substrates with a rate of deposition of 1-2 nms−1 and film thickness of 500 nm. Then, the crystal structure, morphology, electrical, and optical properties along with chemical composition of SnS films have been investigated and discussed in view of their potential applications in photovoltaic technology. The obtained results reveal that SnS films grown on ITO substrates have (111) as preferential orientation crystals with different sizes. These films are highly rough-in surface morphology, and exhibited very low-electrical resistivity in the order of 10−3 Ωcm. These films also exhibited direct optical band gap and transmittance of about 60%. From these investigations we emphasized that SnS films deposited on ITO substrates could be adopted as an absorber layer for the development of solar cell devices or active component for other multifunctional devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5047968</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 0094-243X |
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language | eng |
recordid | cdi_scitation_primary_10_1063_1_5047968 |
source | AIP Journals Complete |
subjects | Chemical composition Crystal structure Deposition Film thickness Indium tin oxides Morphology Optical properties Organic chemistry Photovoltaic cells Solar cells Substrates Thin films Tin oxides |
title | Low-resistive tin (II) sulfide thin films for nontoxic and low-cost solar cell devices |
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