Growth and ferroelectric properties of yttrium-doped hafnium oxide/indium-tin oxide polycrystalline heterostructures with sharp and uniform interfaces

We report on the growth of polycrystalline yttrium-5%-doped HfO2 (YHO) films with sharp and uniform interfaces over a large area on indium-tin oxide (ITO) layers and their ferroelectric properties. On substrates of thermally oxidized silicon, YHO/ITO bilayers were deposited in amorphous form by mean...

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Veröffentlicht in:	Journal of applied physics 2018-09, Vol.124 (10)
Hauptverfasser:	Yamada, Hiroyuki, Toyosaki, Yoshikiyo, Sawa, Akihito
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic force microscopy Crystallization Electrical junctions Ferroelectric materials Ferroelectricity Hafnium oxide Heterostructures Hysteresis loops Indium tin oxides Lattice matching Metals Microscopy Morphology Polycrystals Properties (attributes) Pulsed laser deposition Pulsed lasers Reduction Roughness Silicon substrates Transmission electron microscopy X-ray diffraction
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