Synthesis and characterization study of n-Bi2O3/p-Si heterojunction dependence on thickness

In this work, Bi2O3 was deposited as a thin film of different thickness (400, 500, and 600 ±20 nm) by using thermal oxidation at 573 K with ambient oxygen of evaporated bismuth (Bi) thin films in a vacuum on glass substrate and on Si wafer to produce n-Bi2O3/p-Si heterojunction. The effect of thickn...

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Hauptverfasser:	Al-Maiyaly, Bushra K. H., Hussein, Bushra H., Salih, Ayad A., Shaban, Auday H., Mahdi, Shatha H., Khudayer, Iman H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bismuth oxides Bismuth trioxide Carrier density Circuits Current density Dependence Electrical properties Film thickness Glass substrates Heterojunctions Open circuit voltage Optical measurement Optical properties Optical transition Oxidation Photovoltaic cells Reflectance Short circuit currents Silicon substrates Solar cells Surface properties Thin films Volt-ampere characteristics
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