Extinction of random telegraph switching in small area silicon metal-oxide-semiconductor transistors
Random telegraph switching (RTS) noise showing a slow decay in the switching rate at cryogenic temperatures which leads to the eventual extinction of the discrete noise fluctuations has been observed in the drain-source current (IDS) of small area (
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| Veröffentlicht in: | Journal of applied physics 2018-08, Vol.124 (6) |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Random telegraph switching (RTS) noise showing a slow decay in the switching rate at cryogenic temperatures which leads to the eventual extinction of the discrete noise fluctuations has been observed in the drain-source current (IDS) of small area ( |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.5038546 |