Enhanced dielectric and electrical properties of annealed PVDF thin film

Enhanced dielectric and electrical properties of annealed PVDF thin film

Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in compar...

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Hauptverfasser: Arshad, A. N., Rozana, M. D., Wahid, M. H. M., Mahmood, M. K. A, Sarip, M. N., Habibah, Z., Rusop, M.
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creator Arshad, A. N.
Rozana, M. D.
Wahid, M. H. M.
Mahmood, M. K. A
Sarip, M. N.
Habibah, Z.
Rusop, M.
description Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.
doi_str_mv 10.1063/1.5036856
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N. ; Rozana, M. D. ; Wahid, M. H. M. ; Mahmood, M. K. A ; Sarip, M. N. ; Habibah, Z. ; Rusop, M.</creator><contributor>Mamat, Mohamad Hafiz ; Mahmood, Mohamad Rusop ; Jafar, Salifairus Mohammad ; Nagaoka, Shiro ; Soga, Tetsuo</contributor><creatorcontrib>Arshad, A. N. ; Rozana, M. D. ; Wahid, M. H. M. ; Mahmood, M. K. A ; Sarip, M. N. ; Habibah, Z. ; Rusop, M. ; Mamat, Mohamad Hafiz ; Mahmood, Mohamad Rusop ; Jafar, Salifairus Mohammad ; Nagaoka, Shiro ; Soga, Tetsuo</creatorcontrib><description>Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. 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This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.</abstract><doi>10.1063/1.5036856</doi><tpages>6</tpages></addata></record>
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