Growth and morphological evolution of c-axis oriented AlN films on Si (100) substrates by DC sputtering technique

Aluminum nitride (AlN) films were grown on Si substrates by dc magnetron sputtering in plasma containing a mixture of argon and nitrogen, using a pure aluminum target. In this paper, we studied the growth of AlN films on Si(100) substrates under varying gas ratio (N2 to Ar gas ratio) by DC reactive...

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Hauptverfasser:	Pandey, Akhilesh, Prakash, Ravi, Dutta, Shankar, Dalal, Sandeep, Kumar, Anand, Kapoor, Ashok K., Kaur, Davinder
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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