Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium
The plasma assisted As doping (PLAD) technique is used to demonstrate multiple flatband voltages (multi-Vfb) on TiN/HfO2 Ge gate stacks for n-FinFET applications. Through detailed studies with varying doses, implant energies, and TiN cap thicknesses, we show that the PLAD As technique can be used to...
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Veröffentlicht in: | Applied physics letters 2018-05, Vol.112 (20) |
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creator | Kothari, Shraddha Vaidya, Dhirendra Nejad, Hasan Variam, Naushad Ganguly, Swaroop Lodha, Saurabh |
description | The plasma assisted As doping (PLAD) technique is used to demonstrate multiple flatband voltages (multi-Vfb) on TiN/HfO2 Ge gate stacks for n-FinFET applications. Through detailed studies with varying doses, implant energies, and TiN cap thicknesses, we show that the PLAD As technique can be used to obtain effective work function (EWF) modulation from the near midgap to the conduction band edge (up to 280 meV) of Ge, a key technological requirement for multi-threshold voltage (VT) Ge n-FinFETs. Furthermore, there is no deterioration of key gate stack parameters such as gate leakage, effective oxide thickness, and gate/channel interface trap densities. From secondary ion mass spectroscopy data, we attribute the tuning of EWF to As accumulation and interfacial dipole formation at the TiN/HfO2 interface. The experimental observations are reinforced by ab initio simulations of near-interface As substitutions at the TiN/HfO2 interface. As substitution at N sites near the interface reduces the EWF, making it more suitable for n-MOS applications. |
doi_str_mv | 10.1063/1.5028045 |
format | Article |
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Through detailed studies with varying doses, implant energies, and TiN cap thicknesses, we show that the PLAD As technique can be used to obtain effective work function (EWF) modulation from the near midgap to the conduction band edge (up to 280 meV) of Ge, a key technological requirement for multi-threshold voltage (VT) Ge n-FinFETs. Furthermore, there is no deterioration of key gate stack parameters such as gate leakage, effective oxide thickness, and gate/channel interface trap densities. From secondary ion mass spectroscopy data, we attribute the tuning of EWF to As accumulation and interfacial dipole formation at the TiN/HfO2 interface. The experimental observations are reinforced by ab initio simulations of near-interface As substitutions at the TiN/HfO2 interface. As substitution at N sites near the interface reduces the EWF, making it more suitable for n-MOS applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5028045</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Conduction bands ; Current leakage ; Gates ; Germanium ; Hafnium oxide ; Implants ; Modulation ; Secondary ion mass spectroscopy ; Stacks ; Thickness ; Threshold voltage ; Transplants & implants ; Work functions</subject><ispartof>Applied physics letters, 2018-05, Vol.112 (20)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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Through detailed studies with varying doses, implant energies, and TiN cap thicknesses, we show that the PLAD As technique can be used to obtain effective work function (EWF) modulation from the near midgap to the conduction band edge (up to 280 meV) of Ge, a key technological requirement for multi-threshold voltage (VT) Ge n-FinFETs. Furthermore, there is no deterioration of key gate stack parameters such as gate leakage, effective oxide thickness, and gate/channel interface trap densities. From secondary ion mass spectroscopy data, we attribute the tuning of EWF to As accumulation and interfacial dipole formation at the TiN/HfO2 interface. The experimental observations are reinforced by ab initio simulations of near-interface As substitutions at the TiN/HfO2 interface. As substitution at N sites near the interface reduces the EWF, making it more suitable for n-MOS applications.</description><subject>Applied physics</subject><subject>Conduction bands</subject><subject>Current leakage</subject><subject>Gates</subject><subject>Germanium</subject><subject>Hafnium oxide</subject><subject>Implants</subject><subject>Modulation</subject><subject>Secondary ion mass spectroscopy</subject><subject>Stacks</subject><subject>Thickness</subject><subject>Threshold voltage</subject><subject>Transplants & implants</subject><subject>Work functions</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kM1LwzAYxoMoOKcH_4OAJ4Vu-Wja9DiGOkGch3kOaZqMbm1Tk3Tif2_chh4ET-_Xj-fleQC4xmiCUUaneMIQ4ShlJ2CEUZ4nFGN-CkYIIZpkBcPn4ML7TRwZoXQE1q-N9K1MpPe1D7qCMw_rtm9kFzw01kFtjFah3mn4Yd0WmqGLk-1ga6uhkfvWGriqX6YLsyRwLYOGPki19TCe1tq1squH9hKcGdl4fXWsY_D2cL-aL5Ln5ePTfPacKErykORpWuY4rSQtS8pIVqqy4pozSSSKTpAsURV3BTesrHKFTFrILGVEGZUpiTQdg5uDbu_s-6B9EBs7uC6-FARxnnGECxyp2wOlnPXeaSN6V7fSfQqMxHeOAotjjpG9O7Be1WFv-AfeWfcLir4y_8F_lb8A9N2B8A</recordid><startdate>20180514</startdate><enddate>20180514</enddate><creator>Kothari, Shraddha</creator><creator>Vaidya, Dhirendra</creator><creator>Nejad, Hasan</creator><creator>Variam, Naushad</creator><creator>Ganguly, Swaroop</creator><creator>Lodha, Saurabh</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7205-1013</orcidid><orcidid>https://orcid.org/0000-0003-1184-8421</orcidid></search><sort><creationdate>20180514</creationdate><title>Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium</title><author>Kothari, Shraddha ; Vaidya, Dhirendra ; Nejad, Hasan ; Variam, Naushad ; Ganguly, Swaroop ; Lodha, Saurabh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-744b714da3bb3526bcbd8e85a2a03110ab0dbcb98f5bd7c0f49a6452cfc6ca0e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Conduction bands</topic><topic>Current leakage</topic><topic>Gates</topic><topic>Germanium</topic><topic>Hafnium oxide</topic><topic>Implants</topic><topic>Modulation</topic><topic>Secondary ion mass spectroscopy</topic><topic>Stacks</topic><topic>Thickness</topic><topic>Threshold voltage</topic><topic>Transplants & implants</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kothari, Shraddha</creatorcontrib><creatorcontrib>Vaidya, Dhirendra</creatorcontrib><creatorcontrib>Nejad, Hasan</creatorcontrib><creatorcontrib>Variam, Naushad</creatorcontrib><creatorcontrib>Ganguly, Swaroop</creatorcontrib><creatorcontrib>Lodha, Saurabh</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kothari, Shraddha</au><au>Vaidya, Dhirendra</au><au>Nejad, Hasan</au><au>Variam, Naushad</au><au>Ganguly, Swaroop</au><au>Lodha, Saurabh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium</atitle><jtitle>Applied physics letters</jtitle><date>2018-05-14</date><risdate>2018</risdate><volume>112</volume><issue>20</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The plasma assisted As doping (PLAD) technique is used to demonstrate multiple flatband voltages (multi-Vfb) on TiN/HfO2 Ge gate stacks for n-FinFET applications. Through detailed studies with varying doses, implant energies, and TiN cap thicknesses, we show that the PLAD As technique can be used to obtain effective work function (EWF) modulation from the near midgap to the conduction band edge (up to 280 meV) of Ge, a key technological requirement for multi-threshold voltage (VT) Ge n-FinFETs. Furthermore, there is no deterioration of key gate stack parameters such as gate leakage, effective oxide thickness, and gate/channel interface trap densities. From secondary ion mass spectroscopy data, we attribute the tuning of EWF to As accumulation and interfacial dipole formation at the TiN/HfO2 interface. The experimental observations are reinforced by ab initio simulations of near-interface As substitutions at the TiN/HfO2 interface. 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subjects | Applied physics Conduction bands Current leakage Gates Germanium Hafnium oxide Implants Modulation Secondary ion mass spectroscopy Stacks Thickness Threshold voltage Transplants & implants Work functions |
title | Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium |
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