Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption
We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the excitation of band-to-band transitions, fourth-ord...
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| Veröffentlicht in: | Journal of applied physics 2018-06, Vol.123 (24) |
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| container_title | Journal of applied physics |
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| creator | Martins, R. J. Siqueira, J. P. Manglano Clavero, I. Margenfeld, C. Fündling, S. Vogt, A. Waag, A. Voss, T. Mendonca, C. R. |
| description | We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the excitation of band-to-band transitions, fourth-order (INBE ∝ Iexc4) and sub-linear (IYL ∝ Iexc0.5) dependencies were observed for the intensity of the NBE and YL as a function of the excitation intensity, respectively. Modelling the carrier dynamics with a few-level rate-equation model revealed that, for high excitation irradiances, the electron-hole population generated by three-photon absorption is such that the NBE recombination rate is intensified (exponent > 3) and, at the same time, the competition between the electron capturing and the defect-level emission rate suppresses the YL (exponent |
| doi_str_mv | 10.1063/1.5027395 |
| format | Article |
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J. ; Siqueira, J. P. ; Manglano Clavero, I. ; Margenfeld, C. ; Fündling, S. ; Vogt, A. ; Waag, A. ; Voss, T. ; Mendonca, C. R.</creator><creatorcontrib>Martins, R. J. ; Siqueira, J. P. ; Manglano Clavero, I. ; Margenfeld, C. ; Fündling, S. ; Vogt, A. ; Waag, A. ; Voss, T. ; Mendonca, C. R.</creatorcontrib><description>We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the excitation of band-to-band transitions, fourth-order (INBE ∝ Iexc4) and sub-linear (IYL ∝ Iexc0.5) dependencies were observed for the intensity of the NBE and YL as a function of the excitation intensity, respectively. Modelling the carrier dynamics with a few-level rate-equation model revealed that, for high excitation irradiances, the electron-hole population generated by three-photon absorption is such that the NBE recombination rate is intensified (exponent > 3) and, at the same time, the competition between the electron capturing and the defect-level emission rate suppresses the YL (exponent < 1).</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5027395</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Emission analysis ; Energy gap ; Excitation ; Photon absorption</subject><ispartof>Journal of applied physics, 2018-06, Vol.123 (24)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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Modelling the carrier dynamics with a few-level rate-equation model revealed that, for high excitation irradiances, the electron-hole population generated by three-photon absorption is such that the NBE recombination rate is intensified (exponent > 3) and, at the same time, the competition between the electron capturing and the defect-level emission rate suppresses the YL (exponent < 1).</description><subject>Applied physics</subject><subject>Emission analysis</subject><subject>Energy gap</subject><subject>Excitation</subject><subject>Photon absorption</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqd0MFKAzEQBuAgCtbqwTcIeFJYzWx2N5ujFK1C0Yuew-xuQlPaZE1SsW9vSgvePQ0MH_8wPyHXwO6BNfwB7mtWCi7rEzIB1spC1DU7JRPGSihaKeQ5uYhxxRhAy-WEmBmGYHWgw87hxvaRohuoH5PtcU2dd2vrNAabrI7UOop0jm9Ujzbhj80iLfPS2PWGbt2QY9IyaF2MS598xl30IUd5d0nODK6jvjrOKfl8fvqYvRSL9_nr7HFR9LwUqRCy66EqESWTstWskQiyahiUYLCrhEGpAeTQtQIAtKl4JctW9MYYkA12fEpuDrlj8F9bHZNa-W1w-aQqWdtyaDhUWd0eVB98jEEbNQa7wbBTwNS-RgXqWGO2dwcb-_zz_pf_4W8f_qAaB8N_Ae_7gQw</recordid><startdate>20180628</startdate><enddate>20180628</enddate><creator>Martins, R. J.</creator><creator>Siqueira, J. P.</creator><creator>Manglano Clavero, I.</creator><creator>Margenfeld, C.</creator><creator>Fündling, S.</creator><creator>Vogt, A.</creator><creator>Waag, A.</creator><creator>Voss, T.</creator><creator>Mendonca, C. R.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180628</creationdate><title>Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption</title><author>Martins, R. J. ; Siqueira, J. P. ; Manglano Clavero, I. ; Margenfeld, C. ; Fündling, S. ; Vogt, A. ; Waag, A. ; Voss, T. ; Mendonca, C. 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R.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Martins, R. J.</au><au>Siqueira, J. P.</au><au>Manglano Clavero, I.</au><au>Margenfeld, C.</au><au>Fündling, S.</au><au>Vogt, A.</au><au>Waag, A.</au><au>Voss, T.</au><au>Mendonca, C. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption</atitle><jtitle>Journal of applied physics</jtitle><date>2018-06-28</date><risdate>2018</risdate><volume>123</volume><issue>24</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the excitation of band-to-band transitions, fourth-order (INBE ∝ Iexc4) and sub-linear (IYL ∝ Iexc0.5) dependencies were observed for the intensity of the NBE and YL as a function of the excitation intensity, respectively. Modelling the carrier dynamics with a few-level rate-equation model revealed that, for high excitation irradiances, the electron-hole population generated by three-photon absorption is such that the NBE recombination rate is intensified (exponent > 3) and, at the same time, the competition between the electron capturing and the defect-level emission rate suppresses the YL (exponent < 1).</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5027395</doi><tpages>5</tpages></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Emission analysis Energy gap Excitation Photon absorption |
| title | Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption |
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