Optical signatures of deep level defects in Ga2O3

We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us...

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Veröffentlicht in:	Applied physics letters 2018-06, Vol.112 (24)
Hauptverfasser:	Gao, Hantian, Muralidharan, Shreyas, Pronin, Nicholas, Karim, Md Rezaul, White, Susan M., Asel, Thaddeus, Foster, Geoffrey, Krishnamoorthy, Sriram, Rajan, Siddharth, Cao, Lei R., Higashiwaki, Masataka, von Wenckstern, Holger, Grundmann, Marius, Zhao, Hongping, Look, David C., Brillson, Leonard J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Cathodoluminescence Energy levels Gallium oxides Neutron irradiation Optics Plasma processing Point defects Spectrum analysis Vacancies
Online-Zugang:	Volltext
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