Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

The electrical properties of epitaxial β-Ga2O3 doped with Sn (1016–9 × 1018 cm−3) and grown by metalorganic chemical vapor deposition on semi-insulating β-Ga2O3 substrates are reported. Shallow donors attributable to Sn were observed only in a narrow region near the film/substrate interface and with...

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Veröffentlicht in:	Journal of applied physics 2018-03, Vol.123 (11)
Hauptverfasser:	Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Gogova, D., Tarelkin, S. A., Pearton, S. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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