Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition

We report on real-time spectroscopic reflectance anisotropy measurements carried out during the epitaxial growth of GaAs/GaAs (001). Our work is aimed to the study of fundamental processes occurring during the epitaxial growth of III-V semi-conductors. We show that during growth there is an oscillat...

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Hauptverfasser: Ortega-Gallegos, J., Guevara-Macías, L. E., Lastras-Martínez, A., Ariza-Flores, D., Balderas-Navarro, R. E., Lastras-Martínez, L. F.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We report on real-time spectroscopic reflectance anisotropy measurements carried out during the epitaxial growth of GaAs/GaAs (001). Our work is aimed to the study of fundamental processes occurring during the epitaxial growth of III-V semi-conductors. We show that during growth there is an oscillation in the surface strain associated to surface reconstruction, suggesting the existence of a mechanism of periodic build up-relaxation of the surface strain, indicating that the technique employed in this work may potentially distinguish between two reconstruction phases.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5024494