Capping layer modulation of composition of GaAs/In0.15Ga0.75As/InXGa1-XAs/GaAs quantum wells and InAs QD’s emission
The GaAs/In0.15Ga0.85As/InxGa1-xAs /GaAs quantum wells (QWs) with the InAs quantum dots (QDs) have been studied by means of photoluminescence and high resolution X ray diffraction (HR-XRD) methods. The QW structures are characterized by the different compositions of capping InxGa1-xAs layers with th...
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| creator | Vega-Macotela, L. G. Torchynska, T. Polupan, G. Muñiz-García, P. I. |
| description | The GaAs/In0.15Ga0.85As/InxGa1-xAs /GaAs quantum wells (QWs) with the InAs quantum dots (QDs) have been studied by means of photoluminescence and high resolution X ray diffraction (HR-XRD) methods. The QW structures are characterized by the different compositions of capping InxGa1-xAs layers with the parameter x from the range 0.10-0.25. The InxGa1-xAs composition varying is accompanied by the change non-monotonously of the PL intensity and peak positions of InAs QD emission. HR-XRD results have been used for the control the QW compositions. Numerical simulations of HR-XRD results have shown that the composition of quantum layers vary none monotonously in studied QD structures as well. The physical reasons of the mentioned optical and structural effects and their dependence on capping layer compositions have been discussed. |
| doi_str_mv | 10.1063/1.5024491 |
| format | Conference Proceeding |
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G. ; Torchynska, T. ; Polupan, G. ; Muñiz-García, P. I.</creator><contributor>Hernández-Calderón, Isaac ; Henini, Mohamed</contributor><creatorcontrib>Vega-Macotela, L. G. ; Torchynska, T. ; Polupan, G. ; Muñiz-García, P. I. ; Hernández-Calderón, Isaac ; Henini, Mohamed</creatorcontrib><description>The GaAs/In0.15Ga0.85As/InxGa1-xAs /GaAs quantum wells (QWs) with the InAs quantum dots (QDs) have been studied by means of photoluminescence and high resolution X ray diffraction (HR-XRD) methods. The QW structures are characterized by the different compositions of capping InxGa1-xAs layers with the parameter x from the range 0.10-0.25. The InxGa1-xAs composition varying is accompanied by the change non-monotonously of the PL intensity and peak positions of InAs QD emission. HR-XRD results have been used for the control the QW compositions. Numerical simulations of HR-XRD results have shown that the composition of quantum layers vary none monotonously in studied QD structures as well. 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The physical reasons of the mentioned optical and structural effects and their dependence on capping layer compositions have been discussed.</description><subject>Capping</subject><subject>Composition</subject><subject>Computer simulation</subject><subject>Dependence</subject><subject>Photoluminescence</subject><subject>Quantum dots</subject><subject>Quantum wells</subject><subject>X-ray diffraction</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9UU1LxDAQDaLgunrwHwS8Cd3NpEmbHJdV68KCCAp7C-lHpEvbZJtW2Zt_w7_nL7H7Id48zcybN-8xMwhdA5kAicIpTDihjEk4QSPgHII4gugUjQiRLKAsXJ2jC-_XhFAZx2KE-rl2rmzecKW3RYtrm_eV7krbYGtwZmtnfflbJnrmp4tmcOKJJpOY78tVoiFYDemujTe9brq-xh9FVXmsmxwvmgF-vvv-_PK4qEvvB7VLdGZ05YurYxyj14f7l_ljsHxKFvPZMnBUiC4INTM0BSPyVOoop5SlshgQGudSm5gDFcTwLDeCMpJFWWpSo00qsogZiE0ajtHNQde1dtMXvlNr27fNYKkoABdAGJUD6_bA8lnZ7ZdXri1r3W7Vu20VqONJlcvNf2QgaveDv4HwB9o3ePI</recordid><startdate>20180208</startdate><enddate>20180208</enddate><creator>Vega-Macotela, L. 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I.</au><au>Hernández-Calderón, Isaac</au><au>Henini, Mohamed</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Capping layer modulation of composition of GaAs/In0.15Ga0.75As/InXGa1-XAs/GaAs quantum wells and InAs QD’s emission</atitle><btitle>AIP conference proceedings</btitle><date>2018-02-08</date><risdate>2018</risdate><volume>1934</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>The GaAs/In0.15Ga0.85As/InxGa1-xAs /GaAs quantum wells (QWs) with the InAs quantum dots (QDs) have been studied by means of photoluminescence and high resolution X ray diffraction (HR-XRD) methods. The QW structures are characterized by the different compositions of capping InxGa1-xAs layers with the parameter x from the range 0.10-0.25. The InxGa1-xAs composition varying is accompanied by the change non-monotonously of the PL intensity and peak positions of InAs QD emission. HR-XRD results have been used for the control the QW compositions. Numerical simulations of HR-XRD results have shown that the composition of quantum layers vary none monotonously in studied QD structures as well. The physical reasons of the mentioned optical and structural effects and their dependence on capping layer compositions have been discussed.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5024491</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2018, Vol.1934 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_5024491 |
| source | AIP Journals (American Institute of Physics) |
| subjects | Capping Composition Computer simulation Dependence Photoluminescence Quantum dots Quantum wells X-ray diffraction |
| title | Capping layer modulation of composition of GaAs/In0.15Ga0.75As/InXGa1-XAs/GaAs quantum wells and InAs QD’s emission |
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