Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to...

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Veröffentlicht in:Journal of applied physics 2018-03, Vol.123 (11)
Hauptverfasser: Rousseau, Ian, Callsen, Gordon, Jacopin, Gwénolé, Carlin, Jean-François, Butté, Raphaël, Grandjean, Nicolas
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container_issue 11
container_start_page
container_title Journal of applied physics
container_volume 123
creator Rousseau, Ian
Callsen, Gordon
Jacopin, Gwénolé
Carlin, Jean-François
Butté, Raphaël
Grandjean, Nicolas
description III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm−1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.
doi_str_mv 10.1063/1.5022150
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subjects Condensed Matter
Engineering Sciences
Materials Science
Micro and nanotechnologies
Microelectronics
Optics
Photonic
Physics
title Optical absorption and oxygen passivation of surface states in III-nitride photonic devices
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