Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN
We report persistent photoconductivity in Mg-doped GdN thin films grown by molecular beam epitaxy. Temperature-dependent measurements were carried out in the time and frequency domains to probe the nature of Mg impurities in GdN. The results reveal an initial fast decay followed by a slow persistent...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2018-03, Vol.123 (11) |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 11 |
| container_start_page | |
| container_title | Journal of applied physics |
| container_volume | 123 |
| creator | Lee, C.-M. Schacht, J. Warring, H. Trodahl, H. J. Ruck, B. J. Vézian, S. Gaston, N. Natali, F. |
| description | We report persistent photoconductivity in Mg-doped GdN thin films grown by molecular beam epitaxy. Temperature-dependent measurements were carried out in the time and frequency domains to probe the nature of Mg impurities in GdN. The results reveal an initial fast decay followed by a slow persistent photoconductivity. The magnitude of the photoconductivity as well as the characteristic fast- and slow-decay times was found to decrease systematically with increasing the Mg-doping level. Our experimental results suggest that Mg impurities in epitaxial GdN thin films act as acceptor-like centres. Interestingly they also show that the incorporation of Mg result in a significant decrease in the concentration of nitrogen vacancies, as is demonstrated also to be in agreement with an ab initio calculation. |
| doi_str_mv | 10.1063/1.5020081 |
| format | Article |
| fullrecord | <record><control><sourceid>hal_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_5020081</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_04903963v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c333t-4a57aef7f5ea6ef52cc96ecfb87b04c08522d56b98a5f69fc74ba6eb502194703</originalsourceid><addsrcrecordid>eNqdkEFPAjEQhRujiYge_Ae9arI43W53t0dCEExQL3p10-22UAPtpi1E_r0lELl7epl530zyHkL3BEYESvpERgxygJpcoAGBmmcVY3CJBgA5yWpe8Wt0E8I3ACE15QP0Nf3plTcbZaNYY2E7LFpsrInG4RC33R47jV-XuHO9scvk4LhSSaI3NhiJtfLebcTSqpimoDZGOtttZXQez7q3W3SlxTqou5MO0efz9GMyzxbvs5fJeJFJSmnMCsEqoXSlmRKl0iyXkpdK6rauWigk1CzPO1a2vBZMl1zLqmgT2KashBcV0CF6OP5diXXTpzzC7xsnTDMfL5rDDgoOlJd0R86s9C4Er_TfAYHmUGJDmlOJiX08skGaKFIp9n_wzvkz2PSdpr_NX4CB</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Lee, C.-M. ; Schacht, J. ; Warring, H. ; Trodahl, H. J. ; Ruck, B. J. ; Vézian, S. ; Gaston, N. ; Natali, F.</creator><creatorcontrib>Lee, C.-M. ; Schacht, J. ; Warring, H. ; Trodahl, H. J. ; Ruck, B. J. ; Vézian, S. ; Gaston, N. ; Natali, F.</creatorcontrib><description>We report persistent photoconductivity in Mg-doped GdN thin films grown by molecular beam epitaxy. Temperature-dependent measurements were carried out in the time and frequency domains to probe the nature of Mg impurities in GdN. The results reveal an initial fast decay followed by a slow persistent photoconductivity. The magnitude of the photoconductivity as well as the characteristic fast- and slow-decay times was found to decrease systematically with increasing the Mg-doping level. Our experimental results suggest that Mg impurities in epitaxial GdN thin films act as acceptor-like centres. Interestingly they also show that the incorporation of Mg result in a significant decrease in the concentration of nitrogen vacancies, as is demonstrated also to be in agreement with an ab initio calculation.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5020081</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Physics</subject><ispartof>Journal of applied physics, 2018-03, Vol.123 (11)</ispartof><rights>Author(s)</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-4a57aef7f5ea6ef52cc96ecfb87b04c08522d56b98a5f69fc74ba6eb502194703</citedby><cites>FETCH-LOGICAL-c333t-4a57aef7f5ea6ef52cc96ecfb87b04c08522d56b98a5f69fc74ba6eb502194703</cites><orcidid>0000-0001-8332-1878 ; 0000-0002-7797-0545 ; 0000-0002-4521-047X ; 0000-0002-3719-7375 ; 0000-0001-8049-3295 ; 0000-0003-4966-5348</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5020081$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,4498,27901,27902,76126</link.rule.ids><backlink>$$Uhttps://hal.science/hal-04903963$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, C.-M.</creatorcontrib><creatorcontrib>Schacht, J.</creatorcontrib><creatorcontrib>Warring, H.</creatorcontrib><creatorcontrib>Trodahl, H. J.</creatorcontrib><creatorcontrib>Ruck, B. J.</creatorcontrib><creatorcontrib>Vézian, S.</creatorcontrib><creatorcontrib>Gaston, N.</creatorcontrib><creatorcontrib>Natali, F.</creatorcontrib><title>Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN</title><title>Journal of applied physics</title><description>We report persistent photoconductivity in Mg-doped GdN thin films grown by molecular beam epitaxy. Temperature-dependent measurements were carried out in the time and frequency domains to probe the nature of Mg impurities in GdN. The results reveal an initial fast decay followed by a slow persistent photoconductivity. The magnitude of the photoconductivity as well as the characteristic fast- and slow-decay times was found to decrease systematically with increasing the Mg-doping level. Our experimental results suggest that Mg impurities in epitaxial GdN thin films act as acceptor-like centres. Interestingly they also show that the incorporation of Mg result in a significant decrease in the concentration of nitrogen vacancies, as is demonstrated also to be in agreement with an ab initio calculation.</description><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqdkEFPAjEQhRujiYge_Ae9arI43W53t0dCEExQL3p10-22UAPtpi1E_r0lELl7epl530zyHkL3BEYESvpERgxygJpcoAGBmmcVY3CJBgA5yWpe8Wt0E8I3ACE15QP0Nf3plTcbZaNYY2E7LFpsrInG4RC33R47jV-XuHO9scvk4LhSSaI3NhiJtfLebcTSqpimoDZGOtttZXQez7q3W3SlxTqou5MO0efz9GMyzxbvs5fJeJFJSmnMCsEqoXSlmRKl0iyXkpdK6rauWigk1CzPO1a2vBZMl1zLqmgT2KashBcV0CF6OP5diXXTpzzC7xsnTDMfL5rDDgoOlJd0R86s9C4Er_TfAYHmUGJDmlOJiX08skGaKFIp9n_wzvkz2PSdpr_NX4CB</recordid><startdate>20180321</startdate><enddate>20180321</enddate><creator>Lee, C.-M.</creator><creator>Schacht, J.</creator><creator>Warring, H.</creator><creator>Trodahl, H. J.</creator><creator>Ruck, B. J.</creator><creator>Vézian, S.</creator><creator>Gaston, N.</creator><creator>Natali, F.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-8332-1878</orcidid><orcidid>https://orcid.org/0000-0002-7797-0545</orcidid><orcidid>https://orcid.org/0000-0002-4521-047X</orcidid><orcidid>https://orcid.org/0000-0002-3719-7375</orcidid><orcidid>https://orcid.org/0000-0001-8049-3295</orcidid><orcidid>https://orcid.org/0000-0003-4966-5348</orcidid></search><sort><creationdate>20180321</creationdate><title>Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN</title><author>Lee, C.-M. ; Schacht, J. ; Warring, H. ; Trodahl, H. J. ; Ruck, B. J. ; Vézian, S. ; Gaston, N. ; Natali, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-4a57aef7f5ea6ef52cc96ecfb87b04c08522d56b98a5f69fc74ba6eb502194703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, C.-M.</creatorcontrib><creatorcontrib>Schacht, J.</creatorcontrib><creatorcontrib>Warring, H.</creatorcontrib><creatorcontrib>Trodahl, H. J.</creatorcontrib><creatorcontrib>Ruck, B. J.</creatorcontrib><creatorcontrib>Vézian, S.</creatorcontrib><creatorcontrib>Gaston, N.</creatorcontrib><creatorcontrib>Natali, F.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, C.-M.</au><au>Schacht, J.</au><au>Warring, H.</au><au>Trodahl, H. J.</au><au>Ruck, B. J.</au><au>Vézian, S.</au><au>Gaston, N.</au><au>Natali, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN</atitle><jtitle>Journal of applied physics</jtitle><date>2018-03-21</date><risdate>2018</risdate><volume>123</volume><issue>11</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We report persistent photoconductivity in Mg-doped GdN thin films grown by molecular beam epitaxy. Temperature-dependent measurements were carried out in the time and frequency domains to probe the nature of Mg impurities in GdN. The results reveal an initial fast decay followed by a slow persistent photoconductivity. The magnitude of the photoconductivity as well as the characteristic fast- and slow-decay times was found to decrease systematically with increasing the Mg-doping level. Our experimental results suggest that Mg impurities in epitaxial GdN thin films act as acceptor-like centres. Interestingly they also show that the incorporation of Mg result in a significant decrease in the concentration of nitrogen vacancies, as is demonstrated also to be in agreement with an ab initio calculation.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.5020081</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-8332-1878</orcidid><orcidid>https://orcid.org/0000-0002-7797-0545</orcidid><orcidid>https://orcid.org/0000-0002-4521-047X</orcidid><orcidid>https://orcid.org/0000-0002-3719-7375</orcidid><orcidid>https://orcid.org/0000-0001-8049-3295</orcidid><orcidid>https://orcid.org/0000-0003-4966-5348</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2018-03, Vol.123 (11) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_5020081 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Physics |
| title | Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T23%3A15%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Experimental%20and%20ab%20initio%20study%20of%20Mg%20doping%20in%20the%20intrinsic%20ferromagnetic%20semiconductor%20GdN&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Lee,%20C.-M.&rft.date=2018-03-21&rft.volume=123&rft.issue=11&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.5020081&rft_dat=%3Chal_scita%3Eoai_HAL_hal_04903963v1%3C/hal_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |