Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshol...

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Veröffentlicht in:	Applied physics letters 2018-01, Vol.112 (2)
Hauptverfasser:	Wong, Man Hoi, Takeyama, Akinori, Makino, Takahiro, Ohshima, Takeshi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Current leakage Field effect transistors Gallium oxides Gamma rays Gates Hardness Ionizing radiation MOSFETs Radiation damage Radiation dosage Radiation effects Semiconductor devices Silicon dioxide Threshold voltage Transistors
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