Study of SiGe oxidation kinetics for preferential SiO2 formation under a low O2 pressure condition

We have studied the oxidation kinetics of SiGe as parameters of O2 pressure and temperature. This paper first discusses the SiGe oxidation experimentally and thermodynamically. It was found that Si was predominantly oxidized in the Si0.5Ge0.5 oxidation under lower O2 pressures. This fact is thermody...

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Veröffentlicht in:	Journal of applied physics 2017-11, Vol.122 (18)
Hauptverfasser:	Song, Woojin, Toriumi, Akira
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied physics Germanium Germanium oxides Interfacial properties Oxidation Reaction kinetics Silicon dioxide Silicon germanides Silicon substrates Stacks
Online-Zugang:	Volltext
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