Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

We report two-step annealing, high temperature and sequent low temperature, for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) to improve its stability and device performance. The annealing is carried out at 300 oC in N2 ambient for 1 h (1st step annealing) and then at 250 o...

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Veröffentlicht in:	AIP advances 2017-12, Vol.7 (12), p.125110-125110-7
Hauptverfasser:	Jeon, Jae Kwon, Um, Jae Gwang, Lee, Suhui, Jang, Jin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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