Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator
In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface....
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| creator | Takahashi, Takanori Oikawa, Kento Hoga, Takeshi Uraoka, Yukiharu Uchiyama, Kiyoshi |
| description | In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded. |
| doi_str_mv | 10.1063/1.5005765 |
| format | Conference Proceeding |
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We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.5005765</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Dielectrics ; Indium gallium zinc oxide ; Permittivity ; Semiconductor devices ; Silicon dioxide ; Strontium zirconates ; Thin film transistors ; Threshold voltage</subject><ispartof>AIP conference proceedings, 2017, Vol.1892 (1)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/1.5005765$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>310,311,315,781,785,790,791,795,4513,23935,23936,25145,27929,27930,76389</link.rule.ids></links><search><contributor>Keong, Choong Kok</contributor><contributor>Bakar, Badorul Hisham Abu</contributor><contributor>Yusoff, Mohd Suffian</contributor><contributor>Halim, Herni</contributor><contributor>Hasan, Mohd Rosli Mohd</contributor><contributor>Aziz, Hamidi Abdul</contributor><contributor>Johari, Megat Azmi Megat</contributor><contributor>Ramli, Muhd Harris</contributor><creatorcontrib>Takahashi, Takanori</creatorcontrib><creatorcontrib>Oikawa, Kento</creatorcontrib><creatorcontrib>Hoga, Takeshi</creatorcontrib><creatorcontrib>Uraoka, Yukiharu</creatorcontrib><creatorcontrib>Uchiyama, Kiyoshi</creatorcontrib><title>Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator</title><title>AIP conference proceedings</title><description>In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. 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In addition, the residual carbon originated from organic precursors makes TFT performances degraded.</description><subject>Dielectrics</subject><subject>Indium gallium zinc oxide</subject><subject>Permittivity</subject><subject>Semiconductor devices</subject><subject>Silicon dioxide</subject><subject>Strontium zirconates</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2017</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp90E1LwzAYB_AgCs7pwW8Q8CZ05kmapD3KcHMw2EEF2SWkWeoyuqYmqeK3t7qBN0_P5fe8_RG6BjIBItgdTDghXAp-gkbAOWRSgDhFI0LKPKM5ez1HFzHuCKGllMUImZmugjM6Od9iX2O996Hb-j7iRTvX63aF09a1We2aPU5Bt9HF5AP-dGmLo2_6374ueGNjtBv8FNZhxfCbTha7NvaNHvQlOqt1E-3VsY7Ry-zhefqYLVfzxfR-mXWUs5QJawtRAuFQ2MLwmhtRMlpRI6gUueEAEmTFZQFWEqoLXW9MwcrKCFMxngMbo5vD3OGe997GpHa-D-2wUlEAQXJaCjGo24OKxqXfv1UX3F6HLwVE_YSoQB1D_A9_-PAHVbep2Te88HLZ</recordid><startdate>20171016</startdate><enddate>20171016</enddate><creator>Takahashi, Takanori</creator><creator>Oikawa, Kento</creator><creator>Hoga, Takeshi</creator><creator>Uraoka, Yukiharu</creator><creator>Uchiyama, Kiyoshi</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20171016</creationdate><title>Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator</title><author>Takahashi, Takanori ; Oikawa, Kento ; Hoga, Takeshi ; Uraoka, Yukiharu ; Uchiyama, Kiyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p253t-6ee86910518e8c5f5c6932b2c62764c511717b5781e702a8afdc839bc6cb35413</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Dielectrics</topic><topic>Indium gallium zinc oxide</topic><topic>Permittivity</topic><topic>Semiconductor devices</topic><topic>Silicon dioxide</topic><topic>Strontium zirconates</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takahashi, Takanori</creatorcontrib><creatorcontrib>Oikawa, Kento</creatorcontrib><creatorcontrib>Hoga, Takeshi</creatorcontrib><creatorcontrib>Uraoka, Yukiharu</creatorcontrib><creatorcontrib>Uchiyama, Kiyoshi</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takahashi, Takanori</au><au>Oikawa, Kento</au><au>Hoga, Takeshi</au><au>Uraoka, Yukiharu</au><au>Uchiyama, Kiyoshi</au><au>Keong, Choong Kok</au><au>Bakar, Badorul Hisham Abu</au><au>Yusoff, Mohd Suffian</au><au>Halim, Herni</au><au>Hasan, Mohd Rosli Mohd</au><au>Aziz, Hamidi Abdul</au><au>Johari, Megat Azmi Megat</au><au>Ramli, Muhd Harris</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator</atitle><btitle>AIP conference proceedings</btitle><date>2017-10-16</date><risdate>2017</risdate><volume>1892</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5005765</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2017, Vol.1892 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_5005765 |
| source | AIP Journals Complete |
| subjects | Dielectrics Indium gallium zinc oxide Permittivity Semiconductor devices Silicon dioxide Strontium zirconates Thin film transistors Threshold voltage |
| title | Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator |
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