Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor

We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor. A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this...

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Veröffentlicht in:	Applied physics letters 2018-01, Vol.112 (4)
Hauptverfasser:	Lu, Zhongyuan, Serrao, Claudy, Khan, Asif I., Clarkson, James D., Wong, Justin C., Ramesh, Ramamoorthy, Salahuddin, Sayeef
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Capacitors Electric potential Epitaxial growth Ferroelectric materials Ferroelectricity Insulators Metal-insulator transition Molybdenum disulfide Phase transitions Thin films Transistors
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