Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor
We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor. A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this...
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| Veröffentlicht in: | Applied physics letters 2018-01, Vol.112 (4) |
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| container_title | Applied physics letters |
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| creator | Lu, Zhongyuan Serrao, Claudy Khan, Asif I. Clarkson, James D. Wong, Justin C. Ramesh, Ramamoorthy Salahuddin, Sayeef |
| description | We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor. A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this ferroelectric capacitor, a clear transition from an insulator to a metal and vice versa is observed in the transistor. Importantly, when the biased voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state. Thus, a metallic or insulating phase can be written, erased, or retained simply by biasing the externally connected ferroelectric capacitor. |
| doi_str_mv | 10.1063/1.5005004 |
| format | Article |
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A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this ferroelectric capacitor, a clear transition from an insulator to a metal and vice versa is observed in the transistor. Importantly, when the biased voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state. Thus, a metallic or insulating phase can be written, erased, or retained simply by biasing the externally connected ferroelectric capacitor.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5005004</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Capacitors ; Electric potential ; Epitaxial growth ; Ferroelectric materials ; Ferroelectricity ; Insulators ; Metal-insulator transition ; Molybdenum disulfide ; Phase transitions ; Thin films ; Transistors</subject><ispartof>Applied physics letters, 2018-01, Vol.112 (4)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this ferroelectric capacitor, a clear transition from an insulator to a metal and vice versa is observed in the transistor. Importantly, when the biased voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state. Thus, a metallic or insulating phase can be written, erased, or retained simply by biasing the externally connected ferroelectric capacitor.</description><subject>Applied physics</subject><subject>Capacitors</subject><subject>Electric potential</subject><subject>Epitaxial growth</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Insulators</subject><subject>Metal-insulator transition</subject><subject>Molybdenum disulfide</subject><subject>Phase transitions</subject><subject>Thin films</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqdkE1LAzEQhoMoWKsH_8GCJ6VbM5vNZvcopX5AxYN6DrPZBLakm5qkhf57U7rgXRgY5p1n3mGGkFugc6AVe4Q5pzRFeUYmQIXIGUB9TiaUUpZXDYdLchXCOpW8YGxC7NJqFX2v0NpD1g_dTululg1uyPfOYuytnmUbHdGmZtglxfksehxCH3s3JDHDzGjvnR6NcuWG6J21usve3Wcx0iENXpMLgzbomzFPyffz8mvxmq8-Xt4WT6tcsULEvDHcCKaqkkNDuQJoTa0ZKsRSNFgLXitsudG8KtAwxtqkIXJRaKFaXRo2JXcn3613Pzsdoly7nR_SSlkA8JpWTQWJuj9RyrsQvDZy6_sN-oMEKo_PlCDHZyb24cQG1Uc8Xv4_eO_8Hyi3nWG_yRmEjg</recordid><startdate>20180122</startdate><enddate>20180122</enddate><creator>Lu, Zhongyuan</creator><creator>Serrao, Claudy</creator><creator>Khan, Asif I.</creator><creator>Clarkson, James D.</creator><creator>Wong, Justin C.</creator><creator>Ramesh, Ramamoorthy</creator><creator>Salahuddin, Sayeef</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4369-106X</orcidid></search><sort><creationdate>20180122</creationdate><title>Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor</title><author>Lu, Zhongyuan ; Serrao, Claudy ; Khan, Asif I. ; Clarkson, James D. ; Wong, Justin C. ; Ramesh, Ramamoorthy ; Salahuddin, Sayeef</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-9f5f73c6451905c11bf8e3acaa479a8758cab5fe562af333ba87aa572e7cbe4f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Capacitors</topic><topic>Electric potential</topic><topic>Epitaxial growth</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Insulators</topic><topic>Metal-insulator transition</topic><topic>Molybdenum disulfide</topic><topic>Phase transitions</topic><topic>Thin films</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Zhongyuan</creatorcontrib><creatorcontrib>Serrao, Claudy</creatorcontrib><creatorcontrib>Khan, Asif I.</creatorcontrib><creatorcontrib>Clarkson, James D.</creatorcontrib><creatorcontrib>Wong, Justin C.</creatorcontrib><creatorcontrib>Ramesh, Ramamoorthy</creatorcontrib><creatorcontrib>Salahuddin, Sayeef</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Zhongyuan</au><au>Serrao, Claudy</au><au>Khan, Asif I.</au><au>Clarkson, James D.</au><au>Wong, Justin C.</au><au>Ramesh, Ramamoorthy</au><au>Salahuddin, Sayeef</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor</atitle><jtitle>Applied physics letters</jtitle><date>2018-01-22</date><risdate>2018</risdate><volume>112</volume><issue>4</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor. A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this ferroelectric capacitor, a clear transition from an insulator to a metal and vice versa is observed in the transistor. Importantly, when the biased voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state. Thus, a metallic or insulating phase can be written, erased, or retained simply by biasing the externally connected ferroelectric capacitor.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5005004</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-4369-106X</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2018-01, Vol.112 (4) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Capacitors Electric potential Epitaxial growth Ferroelectric materials Ferroelectricity Insulators Metal-insulator transition Molybdenum disulfide Phase transitions Thin films Transistors |
| title | Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor |
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