Reversal of spontaneous magnetization and spontaneous exchange bias for Sm1−xYxCrO3: The effect of Y doping
We report the crystal and electronic structures and magnetic properties of non-magnetic Y3+ ion doped SmCrO3 crystals. Structural distortion and electronic structure variation are caused by cation disorder due to Y doping. Although the spin moment of Sm3+ is diluted by nonmagnetic Y ions, spin reori...
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| Veröffentlicht in: | Journal of applied physics 2017-11, Vol.122 (20) |
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| container_title | Journal of applied physics |
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| creator | Zhang, Hongguang Wang, Jianhua Xie, Liang Fu, Dexiang Guo, Yanyan Li, Yongtao |
| description | We report the crystal and electronic structures and magnetic properties of non-magnetic Y3+ ion doped SmCrO3 crystals. Structural distortion and electronic structure variation are caused by cation disorder due to Y doping. Although the spin moment of Sm3+ is diluted by nonmagnetic Y ions, spin reorientation continues to exist, and the temperature-dependent magnetization reversal effect and the spontaneous exchange bias effect under zero field cooling are simultaneously induced below Neel temperature. Significantly, the method of doping promotes the achievement of temperature dependent tunable switching of magnetization and sign of a spontaneous exchange bias from positive to negative. Our work provides more tunable ways to the sign reversal of magnetization and exchange bias, which have potential application in designing magnetic random access memory devices, thermomagnetic switches and spin-valve devices. |
| doi_str_mv | 10.1063/1.4995459 |
| format | Article |
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Structural distortion and electronic structure variation are caused by cation disorder due to Y doping. Although the spin moment of Sm3+ is diluted by nonmagnetic Y ions, spin reorientation continues to exist, and the temperature-dependent magnetization reversal effect and the spontaneous exchange bias effect under zero field cooling are simultaneously induced below Neel temperature. Significantly, the method of doping promotes the achievement of temperature dependent tunable switching of magnetization and sign of a spontaneous exchange bias from positive to negative. Our work provides more tunable ways to the sign reversal of magnetization and exchange bias, which have potential application in designing magnetic random access memory devices, thermomagnetic switches and spin-valve devices.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4995459</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Bias ; Cooling effects ; Crystal structure ; Doping ; Electronic structure ; Exchanging ; Magnetic properties ; Magnetism ; Magnetization reversal ; Memory devices ; Neel temperature ; Random access memory ; Spin valves ; Switches ; Temperature dependence</subject><ispartof>Journal of applied physics, 2017-11, Vol.122 (20)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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Structural distortion and electronic structure variation are caused by cation disorder due to Y doping. Although the spin moment of Sm3+ is diluted by nonmagnetic Y ions, spin reorientation continues to exist, and the temperature-dependent magnetization reversal effect and the spontaneous exchange bias effect under zero field cooling are simultaneously induced below Neel temperature. Significantly, the method of doping promotes the achievement of temperature dependent tunable switching of magnetization and sign of a spontaneous exchange bias from positive to negative. Our work provides more tunable ways to the sign reversal of magnetization and exchange bias, which have potential application in designing magnetic random access memory devices, thermomagnetic switches and spin-valve devices.</description><subject>Applied physics</subject><subject>Bias</subject><subject>Cooling effects</subject><subject>Crystal structure</subject><subject>Doping</subject><subject>Electronic structure</subject><subject>Exchanging</subject><subject>Magnetic properties</subject><subject>Magnetism</subject><subject>Magnetization reversal</subject><subject>Memory devices</subject><subject>Neel temperature</subject><subject>Random access memory</subject><subject>Spin valves</subject><subject>Switches</subject><subject>Temperature dependence</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqd0M1KAzEUBeAgCtbqwjcIuFKYmjtpZibupPgHhYLWRVchzU87pZOMybRUn8C1j-iTOLWCuHV1FvfjXDgInQLpAcnoJfT6nLM-43uoA6TgSc4Y2UcdQlJICp7zQ3QU44IQgILyDqoezdqEKJfYWxxr7xrpjF9FXMmZM035JpvSOyyd_nM1GzWXbmbwtJQRWx_wUwWf7x-byWYQRvQKj-cGG2uNarbFE6x9XbrZMTqwchnNyU920fPtzXhwnwxHdw-D62GiaJo3iaQFK7TKLMu5stYyrSjYghIjc2kgYykjBWilcspTrmUbU2q1BN1PLdGSdtHZrrcO_mVlYiMWfhVc-1KkABlhlABr1flOqeBjDMaKOpSVDK8CiNiuKUD8rNnai52Nqmy-N_kfXvvwC0WtLf0CqmiFIQ</recordid><startdate>20171128</startdate><enddate>20171128</enddate><creator>Zhang, Hongguang</creator><creator>Wang, Jianhua</creator><creator>Xie, Liang</creator><creator>Fu, Dexiang</creator><creator>Guo, Yanyan</creator><creator>Li, Yongtao</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8788-7529</orcidid></search><sort><creationdate>20171128</creationdate><title>Reversal of spontaneous magnetization and spontaneous exchange bias for Sm1−xYxCrO3: The effect of Y doping</title><author>Zhang, Hongguang ; Wang, Jianhua ; Xie, Liang ; Fu, Dexiang ; Guo, Yanyan ; Li, Yongtao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-a3858dc6f579cfff5dc31f830ea7ae16525081dcc73929da739b3fda1d42f0da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Bias</topic><topic>Cooling effects</topic><topic>Crystal structure</topic><topic>Doping</topic><topic>Electronic structure</topic><topic>Exchanging</topic><topic>Magnetic properties</topic><topic>Magnetism</topic><topic>Magnetization reversal</topic><topic>Memory devices</topic><topic>Neel temperature</topic><topic>Random access memory</topic><topic>Spin valves</topic><topic>Switches</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Hongguang</creatorcontrib><creatorcontrib>Wang, Jianhua</creatorcontrib><creatorcontrib>Xie, Liang</creatorcontrib><creatorcontrib>Fu, Dexiang</creatorcontrib><creatorcontrib>Guo, Yanyan</creatorcontrib><creatorcontrib>Li, Yongtao</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Hongguang</au><au>Wang, Jianhua</au><au>Xie, Liang</au><au>Fu, Dexiang</au><au>Guo, Yanyan</au><au>Li, Yongtao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reversal of spontaneous magnetization and spontaneous exchange bias for Sm1−xYxCrO3: The effect of Y doping</atitle><jtitle>Journal of applied physics</jtitle><date>2017-11-28</date><risdate>2017</risdate><volume>122</volume><issue>20</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We report the crystal and electronic structures and magnetic properties of non-magnetic Y3+ ion doped SmCrO3 crystals. Structural distortion and electronic structure variation are caused by cation disorder due to Y doping. Although the spin moment of Sm3+ is diluted by nonmagnetic Y ions, spin reorientation continues to exist, and the temperature-dependent magnetization reversal effect and the spontaneous exchange bias effect under zero field cooling are simultaneously induced below Neel temperature. Significantly, the method of doping promotes the achievement of temperature dependent tunable switching of magnetization and sign of a spontaneous exchange bias from positive to negative. Our work provides more tunable ways to the sign reversal of magnetization and exchange bias, which have potential application in designing magnetic random access memory devices, thermomagnetic switches and spin-valve devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4995459</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-8788-7529</orcidid></addata></record> |
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| ispartof | Journal of applied physics, 2017-11, Vol.122 (20) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Bias Cooling effects Crystal structure Doping Electronic structure Exchanging Magnetic properties Magnetism Magnetization reversal Memory devices Neel temperature Random access memory Spin valves Switches Temperature dependence |
| title | Reversal of spontaneous magnetization and spontaneous exchange bias for Sm1−xYxCrO3: The effect of Y doping |
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