Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure

Single layers of tungsten diselenide (WSe2) can be used to construct ultra-thin, high-performance electronics. Additionally, there has been considerable progress in controlled and direct growth of single layers on various substrates. Based on these results, high-quality WSe2-based devices that appro...

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Veröffentlicht in:	Applied physics letters 2017-10, Vol.111 (14)
Hauptverfasser:	Walker, Roger C., Shi, Tan, Jariwala, Bhakti, Jovanovic, Igor, Robinson, Joshua A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Heterostructures Interface stability Metalorganic chemical vapor deposition Organic chemicals Organic chemistry Proton irradiation Selenides Silicon carbide Space applications Substrates Tungsten carbide Tungsten compounds Valence band
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