Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs
We have fabricated GaN-based light-emitting diodes (LEDs) with different quantum well (QW) thicknesses to investigate the influence of the quantum confined Stark effect (QCSE) and carrier localization effect on the carrier recombination processes under both direct current (DC) and alternating curren...
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| Veröffentlicht in: | Applied physics letters 2017-10, Vol.111 (17) |
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| container_title | Applied physics letters |
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| creator | Zhu, Shichao Lin, Shan Li, Jing Yu, Zhiguo Cao, Haicheng Yang, Chao Li, Jinmin Zhao, Lixia |
| description | We have fabricated GaN-based light-emitting diodes (LEDs) with different quantum well (QW) thicknesses to investigate the influence of the quantum confined Stark effect (QCSE) and carrier localization effect on the carrier recombination processes under both direct current (DC) and alternating current (AC) biases. At low current density, QCSE dominates the carrier recombination and decreases the radiative recombination rate. With increasing the current density, QCSE will be screened by injected carriers, and both optical power and modulation bandwidth can be increased. When the polarization field is completely compensated, the carrier localization effect starts to dominate. By reducing the influence of the QCSE and carrier localization effect, a high modulation bandwidth of ∼700 MHz was achieved at a low current density of 425 A/cm2 for the LED with 5 nm QW. Our findings will pave an alternative solution for co-optimization of the modulation bandwidth and efficiency for LEDs at a relatively low current density for visible light communications. |
| doi_str_mv | 10.1063/1.4993230 |
| format | Article |
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At low current density, QCSE dominates the carrier recombination and decreases the radiative recombination rate. With increasing the current density, QCSE will be screened by injected carriers, and both optical power and modulation bandwidth can be increased. When the polarization field is completely compensated, the carrier localization effect starts to dominate. By reducing the influence of the QCSE and carrier localization effect, a high modulation bandwidth of ∼700 MHz was achieved at a low current density of 425 A/cm2 for the LED with 5 nm QW. Our findings will pave an alternative solution for co-optimization of the modulation bandwidth and efficiency for LEDs at a relatively low current density for visible light communications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4993230</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Alternating current ; Applied physics ; Bandwidths ; Carrier recombination ; Current density ; Direct current ; Gallium nitrides ; Light emitting diodes ; Localization ; Low currents ; Modulation ; Organic light emitting diodes ; Quantum wells ; Radiative recombination ; Stark effect</subject><ispartof>Applied physics letters, 2017-10, Vol.111 (17)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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At low current density, QCSE dominates the carrier recombination and decreases the radiative recombination rate. With increasing the current density, QCSE will be screened by injected carriers, and both optical power and modulation bandwidth can be increased. When the polarization field is completely compensated, the carrier localization effect starts to dominate. By reducing the influence of the QCSE and carrier localization effect, a high modulation bandwidth of ∼700 MHz was achieved at a low current density of 425 A/cm2 for the LED with 5 nm QW. Our findings will pave an alternative solution for co-optimization of the modulation bandwidth and efficiency for LEDs at a relatively low current density for visible light communications.</description><subject>Alternating current</subject><subject>Applied physics</subject><subject>Bandwidths</subject><subject>Carrier recombination</subject><subject>Current density</subject><subject>Direct current</subject><subject>Gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Localization</subject><subject>Low currents</subject><subject>Modulation</subject><subject>Organic light emitting diodes</subject><subject>Quantum wells</subject><subject>Radiative recombination</subject><subject>Stark effect</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkMtKAzEUhoMoWKsL3yDgSmFqLjOTyVK01kLRhboOmVxw6jRpk4yiT2-0FffCgXP7-A_nB-AUowlGNb3Ek5JzSijaAyOMGCsoxs0-GCGEaFHzCh-CoxiXua0IpSMwzJ3tB-OUgd7CzSBdGlZQeWc7ZzR8TDK8QmOtUQlKp6GSIXQmwN4r2XefMnXe_e5ztfJ66LfDNuPvnU4v0PoAZ_K-aGXMkovpTTwGB1b20Zzs8hg8306fru-KxcNsfn21KBTlNBVNJUmJTStZazkmsixLikzDkbKk1bRstWaYqqrJQRWrSP6J6IbUhquKM0bH4Gyruw5-M5iYxNIPweWTgmBcI8pw9mUMzreUCj7GYKxYh24lw4fASHy7KrDYuZrZiy0bVZd-Hv0f_ObDHyjW2tIvCKKFkQ</recordid><startdate>20171023</startdate><enddate>20171023</enddate><creator>Zhu, Shichao</creator><creator>Lin, Shan</creator><creator>Li, Jing</creator><creator>Yu, Zhiguo</creator><creator>Cao, Haicheng</creator><creator>Yang, Chao</creator><creator>Li, Jinmin</creator><creator>Zhao, Lixia</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8921-2277</orcidid><orcidid>https://orcid.org/0000-0002-7084-5338</orcidid></search><sort><creationdate>20171023</creationdate><title>Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs</title><author>Zhu, Shichao ; Lin, Shan ; Li, Jing ; Yu, Zhiguo ; Cao, Haicheng ; Yang, Chao ; Li, Jinmin ; Zhao, Lixia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-85a241eba7bf912a44430e890cf2bd34bdd713c58c583c7525232d826e9c59773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Alternating current</topic><topic>Applied physics</topic><topic>Bandwidths</topic><topic>Carrier recombination</topic><topic>Current density</topic><topic>Direct current</topic><topic>Gallium nitrides</topic><topic>Light emitting diodes</topic><topic>Localization</topic><topic>Low currents</topic><topic>Modulation</topic><topic>Organic light emitting diodes</topic><topic>Quantum wells</topic><topic>Radiative recombination</topic><topic>Stark effect</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Shichao</creatorcontrib><creatorcontrib>Lin, Shan</creatorcontrib><creatorcontrib>Li, Jing</creatorcontrib><creatorcontrib>Yu, Zhiguo</creatorcontrib><creatorcontrib>Cao, Haicheng</creatorcontrib><creatorcontrib>Yang, Chao</creatorcontrib><creatorcontrib>Li, Jinmin</creatorcontrib><creatorcontrib>Zhao, Lixia</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Shichao</au><au>Lin, Shan</au><au>Li, Jing</au><au>Yu, Zhiguo</au><au>Cao, Haicheng</au><au>Yang, Chao</au><au>Li, Jinmin</au><au>Zhao, Lixia</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs</atitle><jtitle>Applied physics letters</jtitle><date>2017-10-23</date><risdate>2017</risdate><volume>111</volume><issue>17</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have fabricated GaN-based light-emitting diodes (LEDs) with different quantum well (QW) thicknesses to investigate the influence of the quantum confined Stark effect (QCSE) and carrier localization effect on the carrier recombination processes under both direct current (DC) and alternating current (AC) biases. At low current density, QCSE dominates the carrier recombination and decreases the radiative recombination rate. With increasing the current density, QCSE will be screened by injected carriers, and both optical power and modulation bandwidth can be increased. When the polarization field is completely compensated, the carrier localization effect starts to dominate. By reducing the influence of the QCSE and carrier localization effect, a high modulation bandwidth of ∼700 MHz was achieved at a low current density of 425 A/cm2 for the LED with 5 nm QW. Our findings will pave an alternative solution for co-optimization of the modulation bandwidth and efficiency for LEDs at a relatively low current density for visible light communications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4993230</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-8921-2277</orcidid><orcidid>https://orcid.org/0000-0002-7084-5338</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2017-10, Vol.111 (17) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Alternating current Applied physics Bandwidths Carrier recombination Current density Direct current Gallium nitrides Light emitting diodes Localization Low currents Modulation Organic light emitting diodes Quantum wells Radiative recombination Stark effect |
| title | Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs |
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