Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field, B ∥ , and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative...
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| Veröffentlicht in: | Journal of applied physics 2017-12, Vol.122 (22) |
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| container_title | Journal of applied physics |
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| creator | Melnikov, M. Yu Dolgopolov, V. T. Shashkin, A. A. Huang, S.-H. Liu, C. W. Kravchenko, S. V. |
| description | We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field,
B
∥
, and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at
I
⊥
B
∥
into the one measured at
I
∥
B
∥
is suggested and is shown to yield results that agree with the experiment. |
| doi_str_mv | 10.1063/1.4991545 |
| format | Article |
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B
∥
, and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at
I
⊥
B
∥
into the one measured at
I
∥
B
∥
is suggested and is shown to yield results that agree with the experiment.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4991545</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Anisotropy ; Applied physics ; Crystallography ; Magnetoresistance ; Magnetoresistivity ; Quantum wells ; Ridges ; Silicon germanides</subject><ispartof>Journal of applied physics, 2017-12, Vol.122 (22)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-77887ec0022a25f1c1bb5e7a54d15c70b7bed41813cfc1884221478ba727d98a3</citedby><cites>FETCH-LOGICAL-c327t-77887ec0022a25f1c1bb5e7a54d15c70b7bed41813cfc1884221478ba727d98a3</cites><orcidid>0000-0002-9490-6721</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4991545$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Melnikov, M. Yu</creatorcontrib><creatorcontrib>Dolgopolov, V. T.</creatorcontrib><creatorcontrib>Shashkin, A. A.</creatorcontrib><creatorcontrib>Huang, S.-H.</creatorcontrib><creatorcontrib>Liu, C. W.</creatorcontrib><creatorcontrib>Kravchenko, S. V.</creatorcontrib><title>Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells</title><title>Journal of applied physics</title><description>We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field,
B
∥
, and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at
I
⊥
B
∥
into the one measured at
I
∥
B
∥
is suggested and is shown to yield results that agree with the experiment.</description><subject>Anisotropy</subject><subject>Applied physics</subject><subject>Crystallography</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Quantum wells</subject><subject>Ridges</subject><subject>Silicon germanides</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp90EFLwzAUB_AgCs7pwW8Q8KTQLa9tlvQoQ6cw8DB3Dmmabhlt0iWpsm9vx0QPgqd3eD_-7_FH6BbIBMgsm8IkLwqgOT1DIyC8SBil5ByNCEkh4QUrLtFVCDtCAHhWjNBmbfvQywZLa4KL3nUH7GpsbNdIq3FtdFPhVm6sjs7rYEKUVulhj_smeplszWaLW1eaxsQDXpmFnq7M9Djxvpc29i3-1E0TrtFFLZugb77nGK2fn97nL8nybfE6f1wmKktZTBjjnGk1fJvKlNagoCypZpLmFVDFSMlKXeXAIVO1As7zNIWc8VKylFUFl9kY3Z1yO-_2vQ5R7Fzv7XBSpAAzAgXJ80Hdn5TyLgSva9F500p_EEDEsUcB4rvHwT6cbFAmymic_cEfzv9C0VX1f_hv8hcvwYGS</recordid><startdate>20171214</startdate><enddate>20171214</enddate><creator>Melnikov, M. Yu</creator><creator>Dolgopolov, V. T.</creator><creator>Shashkin, A. A.</creator><creator>Huang, S.-H.</creator><creator>Liu, C. W.</creator><creator>Kravchenko, S. V.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9490-6721</orcidid></search><sort><creationdate>20171214</creationdate><title>Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells</title><author>Melnikov, M. Yu ; Dolgopolov, V. T. ; Shashkin, A. A. ; Huang, S.-H. ; Liu, C. W. ; Kravchenko, S. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-77887ec0022a25f1c1bb5e7a54d15c70b7bed41813cfc1884221478ba727d98a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Anisotropy</topic><topic>Applied physics</topic><topic>Crystallography</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Quantum wells</topic><topic>Ridges</topic><topic>Silicon germanides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Melnikov, M. Yu</creatorcontrib><creatorcontrib>Dolgopolov, V. T.</creatorcontrib><creatorcontrib>Shashkin, A. A.</creatorcontrib><creatorcontrib>Huang, S.-H.</creatorcontrib><creatorcontrib>Liu, C. W.</creatorcontrib><creatorcontrib>Kravchenko, S. V.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Melnikov, M. Yu</au><au>Dolgopolov, V. T.</au><au>Shashkin, A. A.</au><au>Huang, S.-H.</au><au>Liu, C. W.</au><au>Kravchenko, S. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells</atitle><jtitle>Journal of applied physics</jtitle><date>2017-12-14</date><risdate>2017</risdate><volume>122</volume><issue>22</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field,
B
∥
, and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at
I
⊥
B
∥
into the one measured at
I
∥
B
∥
is suggested and is shown to yield results that agree with the experiment.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4991545</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-9490-6721</orcidid></addata></record> |
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| ispartof | Journal of applied physics, 2017-12, Vol.122 (22) |
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| language | eng |
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| source | Alma/SFX Local Collection; AIP Journals (American Institute of Physics) |
| subjects | Anisotropy Applied physics Crystallography Magnetoresistance Magnetoresistivity Quantum wells Ridges Silicon germanides |
| title | Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells |
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