Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density...

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Veröffentlicht in:	Journal of applied physics 2017-10, Vol.122 (14)
Hauptverfasser:	Ali, Faizan, Liu, Xiaohua, Zhou, Dayu, Yang, Xirui, Xu, Jin, Schenk, Tony, Müller, Johannes, Schroeder, Uwe, Cao, Fei, Dong, Xianlin
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Antiferroelectricity Applied physics Electronic devices Electrostatic discharges Endurance Energy Energy storage Extreme values Ferroelectric materials Hafnium oxide Induced polarization Silicon Thermal stability Thin films
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