Thermodynamics of quasi-2D electron gas at BFO/Si interface probed with THz time-domain spectroscopy

An interface is constructed based on a bismuth ferrite oxide (BFO) thin film and p-type silicon, and the temperature dependence of the interface properties has been studied systematically using terahertz time-domain spectroscopy. The BFO/Si interface exhibits quasi-two-dimension electron gas (2DEG)...

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Veröffentlicht in:	Applied physics letters 2017-10, Vol.111 (15)
Hauptverfasser:	Liu, Xiankuan, Zhang, Jiadong, Zhang, Zeyu, Lin, Xian, Yu, Yang, Xing, Xiao, Jin, Zuanming, Cheng, Zhenxiang, Ma, Guohong
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bismuth ferrite Electron gas Electron mobility Electrons Interfacial properties Phase transitions Photonics Silicon Spectrum analysis Temperature dependence Thin films Time domain analysis
Online-Zugang:	Volltext
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