Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

The key feature for the precise tuning of Vth in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf ) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge ( Q p o...

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Veröffentlicht in:	Applied physics letters 2017-06, Vol.110 (24)
Hauptverfasser:	Matys, M., Stoklas, R., Blaho, M., Adamowicz, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied physics Composition Computer simulation Electric potential Electron mobility Gallium nitrides High electron mobility transistors Insulators MIS (semiconductors) Semiconductor devices Silicon dioxide
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