Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition
The key feature for the precise tuning of Vth in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf ) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge ( Q p o...
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| Veröffentlicht in: | Applied physics letters 2017-06, Vol.110 (24) |
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| container_title | Applied physics letters |
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| creator | Matys, M. Stoklas, R. Blaho, M. Adamowicz, B. |
| description | The key feature for the precise tuning of Vth
in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf
) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge (
Q
p
o
l
−
). In order to clarify the origin of Qf
, we carried out a comprehensive capacitance-voltage (C-V) characterization of SiO2/Al
x
Ga1–
x
N/GaN and SiN/Al
x
Ga1–
x
N/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both types of structures, we observed a significant Vth
shift in C-V curves towards the positive gate voltage with increasing x. On the contrary, the Schottky gate structures exhibited Vth
shift towards the more negative biases. From the numerical simulations of C-V curves using the Poisson's equation supported by the analytical calculations of Vth
, we showed that the Vth
shift in the examined MIS structures is due to a significant decrease in the positive Qf
with rising x. Finally, we examined this result with respect to various hypotheses developed in the literature to explain the origin of the positive Qf
at insulator/III-N interfaces. |
| doi_str_mv | 10.1063/1.4986482 |
| format | Article |
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in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf
) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge (
Q
p
o
l
−
). In order to clarify the origin of Qf
, we carried out a comprehensive capacitance-voltage (C-V) characterization of SiO2/Al
x
Ga1–
x
N/GaN and SiN/Al
x
Ga1–
x
N/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both types of structures, we observed a significant Vth
shift in C-V curves towards the positive gate voltage with increasing x. On the contrary, the Schottky gate structures exhibited Vth
shift towards the more negative biases. From the numerical simulations of C-V curves using the Poisson's equation supported by the analytical calculations of Vth
, we showed that the Vth
shift in the examined MIS structures is due to a significant decrease in the positive Qf
with rising x. Finally, we examined this result with respect to various hypotheses developed in the literature to explain the origin of the positive Qf
at insulator/III-N interfaces.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4986482</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Applied physics ; Composition ; Computer simulation ; Electric potential ; Electron mobility ; Gallium nitrides ; High electron mobility transistors ; Insulators ; MIS (semiconductors) ; Semiconductor devices ; Silicon dioxide</subject><ispartof>Applied physics letters, 2017-06, Vol.110 (24)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c472t-5626dae691f384cd3d457084ecf95fb15cca39161d65b47bd34067159e5e1e683</citedby><cites>FETCH-LOGICAL-c472t-5626dae691f384cd3d457084ecf95fb15cca39161d65b47bd34067159e5e1e683</cites><orcidid>0000-0003-4643-830X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4986482$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Matys, M.</creatorcontrib><creatorcontrib>Stoklas, R.</creatorcontrib><creatorcontrib>Blaho, M.</creatorcontrib><creatorcontrib>Adamowicz, B.</creatorcontrib><title>Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition</title><title>Applied physics letters</title><description>The key feature for the precise tuning of Vth
in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf
) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge (
Q
p
o
l
−
). In order to clarify the origin of Qf
, we carried out a comprehensive capacitance-voltage (C-V) characterization of SiO2/Al
x
Ga1–
x
N/GaN and SiN/Al
x
Ga1–
x
N/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both types of structures, we observed a significant Vth
shift in C-V curves towards the positive gate voltage with increasing x. On the contrary, the Schottky gate structures exhibited Vth
shift towards the more negative biases. From the numerical simulations of C-V curves using the Poisson's equation supported by the analytical calculations of Vth
, we showed that the Vth
shift in the examined MIS structures is due to a significant decrease in the positive Qf
with rising x. Finally, we examined this result with respect to various hypotheses developed in the literature to explain the origin of the positive Qf
at insulator/III-N interfaces.</description><subject>Aluminum gallium nitrides</subject><subject>Applied physics</subject><subject>Composition</subject><subject>Computer simulation</subject><subject>Electric potential</subject><subject>Electron mobility</subject><subject>Gallium nitrides</subject><subject>High electron mobility transistors</subject><subject>Insulators</subject><subject>MIS (semiconductors)</subject><subject>Semiconductor devices</subject><subject>Silicon dioxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCtbqwX8Q8KSwbWazye4eS9EqFHvRc8jmo6ZsNzVJi_33btmCd0_DC8_MMIPQPZAJEE6nMCnqihdVfoFGQMoyowDVJRoRQmjGawbX6CbGTR9ZTukINavg1q7D3uKdjy65g8HW_RiN1ZcMa4Nlwq6L-1YmH6azdiHf-5xMsFKZiGWnsUsRK9-l4FvcHPFglN8O83x3i66sbKO5O9cx-nx5_pi_ZsvV4m0-W2aqKPOUMZ5zLQ2vwdKqUJrqgpWkKoyyNbMNMKUkrYGD5qwpykbTgvASWG2YAcMrOkYPw9xd8N97E5PY-H3o-pUih74PCKlYrx4HpYKPMRgrdsFtZTgKIOL0QgHi_MLePg02Kpfk6Zb_4YMPf1DstKW_0Cx-9A</recordid><startdate>20170612</startdate><enddate>20170612</enddate><creator>Matys, M.</creator><creator>Stoklas, R.</creator><creator>Blaho, M.</creator><creator>Adamowicz, B.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4643-830X</orcidid></search><sort><creationdate>20170612</creationdate><title>Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition</title><author>Matys, M. ; Stoklas, R. ; Blaho, M. ; Adamowicz, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c472t-5626dae691f384cd3d457084ecf95fb15cca39161d65b47bd34067159e5e1e683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum gallium nitrides</topic><topic>Applied physics</topic><topic>Composition</topic><topic>Computer simulation</topic><topic>Electric potential</topic><topic>Electron mobility</topic><topic>Gallium nitrides</topic><topic>High electron mobility transistors</topic><topic>Insulators</topic><topic>MIS (semiconductors)</topic><topic>Semiconductor devices</topic><topic>Silicon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matys, M.</creatorcontrib><creatorcontrib>Stoklas, R.</creatorcontrib><creatorcontrib>Blaho, M.</creatorcontrib><creatorcontrib>Adamowicz, B.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Matys, M.</au><au>Stoklas, R.</au><au>Blaho, M.</au><au>Adamowicz, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition</atitle><jtitle>Applied physics letters</jtitle><date>2017-06-12</date><risdate>2017</risdate><volume>110</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The key feature for the precise tuning of Vth
in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf
) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge (
Q
p
o
l
−
). In order to clarify the origin of Qf
, we carried out a comprehensive capacitance-voltage (C-V) characterization of SiO2/Al
x
Ga1–
x
N/GaN and SiN/Al
x
Ga1–
x
N/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both types of structures, we observed a significant Vth
shift in C-V curves towards the positive gate voltage with increasing x. On the contrary, the Schottky gate structures exhibited Vth
shift towards the more negative biases. From the numerical simulations of C-V curves using the Poisson's equation supported by the analytical calculations of Vth
, we showed that the Vth
shift in the examined MIS structures is due to a significant decrease in the positive Qf
with rising x. Finally, we examined this result with respect to various hypotheses developed in the literature to explain the origin of the positive Qf
at insulator/III-N interfaces.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4986482</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-4643-830X</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2017-06, Vol.110 (24) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_4986482 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum gallium nitrides Applied physics Composition Computer simulation Electric potential Electron mobility Gallium nitrides High electron mobility transistors Insulators MIS (semiconductors) Semiconductor devices Silicon dioxide |
| title | Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition |
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