Structural analysis of a phosphide-based epitaxial structure with a buried oxidized AlAs sacrificial layer

Phosphide-based thin-film light-emitting diodes (TF-LEDs) lattice-matched to GaAs are well established in optoelectronics in the wavelength range between 550 and 650 nm. In this work, we investigate the impact of oxidized AlAs to overlying phosphide-based pseudomorphically grown epitaxial structures...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 2017-06, Vol.121 (21)
Hauptverfasser:	Englhard, M., Reuters, B., Baur, J., Klemp, C., Zaumseil, P., Schroeder, T., Skibitzki, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium indium phosphides Applied physics Buried structures Compressive properties Diodes Energy dispersive X ray spectroscopy Energy transmission Epitaxial growth Gallium arsenide Lattice matching Light emission Optoelectronics Organic light emitting diodes Oxidation Photoluminescence Plane strain Quantum wells Scanning electron microscopy Scanning transmission electron microscopy Structural analysis Substrates Thin films Transmission electron microscopy X-ray diffraction
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!