Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with an Y2O3 oxide insulator grown on the H-diamond directly using an electron beam evaporator. The depletion region of the capacitance-voltage curve for the MOS cap...

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Veröffentlicht in:	Applied physics letters 2017-05, Vol.110 (20)
Hauptverfasser:	Liu, J. W., Oosato, H., Liao, M. Y., Koide, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Adsorbates Applied physics Diamonds Electron beam evaporators Field effect transistors Hydrogenation MOSFETs Semiconductor devices Transistors Yttrium oxide
Online-Zugang:	Volltext
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