Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy

We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline elements began to form as the film thicknesses incr...

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Veröffentlicht in:	AIP advances 2017-03, Vol.7 (3), p.035113-035113-5
Hauptverfasser:	Bae, Che Jin, McMahon, Jonathan, Detz, Hermann, Strasser, Gottfried, Park, Junsung, Einarsson, Erik, Eason, D. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Arsenides Crystal structure Crystallinity Epitaxial growth Gallium arsenide Intermetallic compounds Molecular beam epitaxy Raman spectroscopy Residual stress Substrates Tellurides Thickness X ray spectra X-ray diffraction
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