Stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt memory devices

In this study, stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt electrochemical metallization (ECM) memory devices were reported by dispersing metallic Cu into the ZrO2 matrix. Reversible transition among different switching modes can be realized simply by modulating th...

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Veröffentlicht in:	Applied physics letters 2017-02, Vol.110 (9)
Hauptverfasser:	Du, Gang, Chen, Zhian, Mao, Qinan, Ji, Zhenguo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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