Stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt memory devices

Stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt memory devices

In this study, stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt electrochemical metallization (ECM) memory devices were reported by dispersing metallic Cu into the ZrO2 matrix. Reversible transition among different switching modes can be realized simply by modulating th...

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Veröffentlicht in:Applied physics letters 2017-02, Vol.110 (9)
Hauptverfasser: Du, Gang, Chen, Zhian, Mao, Qinan, Ji, Zhenguo
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Chen, Zhian
Mao, Qinan
Ji, Zhenguo
description In this study, stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt electrochemical metallization (ECM) memory devices were reported by dispersing metallic Cu into the ZrO2 matrix. Reversible transition among different switching modes can be realized simply by modulating the polarities and magnitudes of the voltages. Moreover, improved uniformity with lower switching voltages and forming-free behaviors were also demonstrated in this device. The experiment results confirmed that metallic Cu clusters were penetrated into the ZrO2 matrix during the annealing process, which would function as an effective cation source responsible for the nonpolar RS switches. These results suggest that controlling the distribution state of active metal atoms in ECM stacks is a feasible approach for reliable memory applications.
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title Stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt memory devices
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