Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined t...

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Veröffentlicht in:Journal of applied physics 2016-12, Vol.120 (21)
Hauptverfasser: Uedono, Akira, Zhao, Ming, Simoen, Eddy
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Simoen, Eddy
description Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (CNs). The charge state of the vacancies was positive because of the electron transfer from the defects to CN-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by CN-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and CN-related acceptors.
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fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_4970984</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121517248</sourcerecordid><originalsourceid>FETCH-LOGICAL-c428t-ee4fe180436f42b74d6f426025df16f7947288b094f4014f6daa64ee7157b3d23</originalsourceid><addsrcrecordid>eNqdkFFLwzAUhYMoOKcP_oOATwrdkjRtkkcZOoWhgvpc0vZmZnZNTVJhv8C_besE3326XO53zrkchM4pmVGSp3M640oQJfkBmlAiVSKyjByiCSGMJlIJdYxOQtgQQqlM1QR9PXlX2naN4xtgMAaqiJ3BnbNtxDWMe8Cu_Tk3oN_1GnDZuOp91FS606VtbNyNmutm-GGpyUw9zJ8tDtH3Vew9BNyHkdZ461oHLfg1RFsNGcFGP3iXoLen6MjoJsDZ75yi19ubl8Vdsnpc3i-uV0nFmYwJADdAJeFpbjgrBa_HmROW1YbmRigumJQlUdxwQrnJa61zDiBoJsq0ZukUXex9O-8-egix2Ljet0NkwSijGRWMy4G63FOVdyF4MEXn7Vb7XUFJMfZc0OK354G92rOhslFH69r_wZ_O_4FFV5v0GysCi8A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121517248</pqid></control><display><type>article</type><title>Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Uedono, Akira ; Zhao, Ming ; Simoen, Eddy</creator><creatorcontrib>Uedono, Akira ; Zhao, Ming ; Simoen, Eddy</creatorcontrib><description>Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (CNs). The charge state of the vacancies was positive because of the electron transfer from the defects to CN-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by CN-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and CN-related acceptors.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4970984</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Carbon ; Cations ; Electron transfer ; Electrons ; Epitaxial growth ; Metalorganic chemical vapor deposition ; Point defects ; Positron beams ; Silicon substrates ; Trapping ; Vacancies</subject><ispartof>Journal of applied physics, 2016-12, Vol.120 (21)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-ee4fe180436f42b74d6f426025df16f7947288b094f4014f6daa64ee7157b3d23</citedby><cites>FETCH-LOGICAL-c428t-ee4fe180436f42b74d6f426025df16f7947288b094f4014f6daa64ee7157b3d23</cites><orcidid>0000-0001-6224-4869</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4970984$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4497,27903,27904,76130</link.rule.ids></links><search><creatorcontrib>Uedono, Akira</creatorcontrib><creatorcontrib>Zhao, Ming</creatorcontrib><creatorcontrib>Simoen, Eddy</creatorcontrib><title>Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam</title><title>Journal of applied physics</title><description>Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (CNs). The charge state of the vacancies was positive because of the electron transfer from the defects to CN-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by CN-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and CN-related acceptors.</description><subject>Applied physics</subject><subject>Carbon</subject><subject>Cations</subject><subject>Electron transfer</subject><subject>Electrons</subject><subject>Epitaxial growth</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Point defects</subject><subject>Positron beams</subject><subject>Silicon substrates</subject><subject>Trapping</subject><subject>Vacancies</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqdkFFLwzAUhYMoOKcP_oOATwrdkjRtkkcZOoWhgvpc0vZmZnZNTVJhv8C_besE3326XO53zrkchM4pmVGSp3M640oQJfkBmlAiVSKyjByiCSGMJlIJdYxOQtgQQqlM1QR9PXlX2naN4xtgMAaqiJ3BnbNtxDWMe8Cu_Tk3oN_1GnDZuOp91FS606VtbNyNmutm-GGpyUw9zJ8tDtH3Vew9BNyHkdZ461oHLfg1RFsNGcFGP3iXoLen6MjoJsDZ75yi19ubl8Vdsnpc3i-uV0nFmYwJADdAJeFpbjgrBa_HmROW1YbmRigumJQlUdxwQrnJa61zDiBoJsq0ZukUXex9O-8-egix2Ljet0NkwSijGRWMy4G63FOVdyF4MEXn7Vb7XUFJMfZc0OK354G92rOhslFH69r_wZ_O_4FFV5v0GysCi8A</recordid><startdate>20161207</startdate><enddate>20161207</enddate><creator>Uedono, Akira</creator><creator>Zhao, Ming</creator><creator>Simoen, Eddy</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6224-4869</orcidid></search><sort><creationdate>20161207</creationdate><title>Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam</title><author>Uedono, Akira ; Zhao, Ming ; Simoen, Eddy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-ee4fe180436f42b74d6f426025df16f7947288b094f4014f6daa64ee7157b3d23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Carbon</topic><topic>Cations</topic><topic>Electron transfer</topic><topic>Electrons</topic><topic>Epitaxial growth</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Point defects</topic><topic>Positron beams</topic><topic>Silicon substrates</topic><topic>Trapping</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Uedono, Akira</creatorcontrib><creatorcontrib>Zhao, Ming</creatorcontrib><creatorcontrib>Simoen, Eddy</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Uedono, Akira</au><au>Zhao, Ming</au><au>Simoen, Eddy</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam</atitle><jtitle>Journal of applied physics</jtitle><date>2016-12-07</date><risdate>2016</risdate><volume>120</volume><issue>21</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (CNs). The charge state of the vacancies was positive because of the electron transfer from the defects to CN-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by CN-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and CN-related acceptors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4970984</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-6224-4869</orcidid><oa>free_for_read</oa></addata></record>
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source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Carbon
Cations
Electron transfer
Electrons
Epitaxial growth
Metalorganic chemical vapor deposition
Point defects
Positron beams
Silicon substrates
Trapping
Vacancies
title Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T07%3A59%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Probing%20the%20effect%20of%20point%20defects%20on%20the%20leakage%20blocking%20capability%20of%20Al0.1Ga0.9N/Si%20structures%20using%20a%20monoenergetic%20positron%20beam&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Uedono,%20Akira&rft.date=2016-12-07&rft.volume=120&rft.issue=21&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.4970984&rft_dat=%3Cproquest_scita%3E2121517248%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2121517248&rft_id=info:pmid/&rfr_iscdi=true