Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam
Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined t...
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creator | Uedono, Akira Zhao, Ming Simoen, Eddy |
description | Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (CNs). The charge state of the vacancies was positive because of the electron transfer from the defects to CN-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by CN-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and CN-related acceptors. |
doi_str_mv | 10.1063/1.4970984 |
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Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (CNs). The charge state of the vacancies was positive because of the electron transfer from the defects to CN-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by CN-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and CN-related acceptors.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4970984</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Carbon ; Cations ; Electron transfer ; Electrons ; Epitaxial growth ; Metalorganic chemical vapor deposition ; Point defects ; Positron beams ; Silicon substrates ; Trapping ; Vacancies</subject><ispartof>Journal of applied physics, 2016-12, Vol.120 (21)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). 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Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (CNs). The charge state of the vacancies was positive because of the electron transfer from the defects to CN-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by CN-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and CN-related acceptors.</description><subject>Applied physics</subject><subject>Carbon</subject><subject>Cations</subject><subject>Electron transfer</subject><subject>Electrons</subject><subject>Epitaxial growth</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Point defects</subject><subject>Positron beams</subject><subject>Silicon substrates</subject><subject>Trapping</subject><subject>Vacancies</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqdkFFLwzAUhYMoOKcP_oOATwrdkjRtkkcZOoWhgvpc0vZmZnZNTVJhv8C_besE3326XO53zrkchM4pmVGSp3M640oQJfkBmlAiVSKyjByiCSGMJlIJdYxOQtgQQqlM1QR9PXlX2naN4xtgMAaqiJ3BnbNtxDWMe8Cu_Tk3oN_1GnDZuOp91FS606VtbNyNmutm-GGpyUw9zJ8tDtH3Vew9BNyHkdZ461oHLfg1RFsNGcFGP3iXoLen6MjoJsDZ75yi19ubl8Vdsnpc3i-uV0nFmYwJADdAJeFpbjgrBa_HmROW1YbmRigumJQlUdxwQrnJa61zDiBoJsq0ZukUXex9O-8-egix2Ljet0NkwSijGRWMy4G63FOVdyF4MEXn7Vb7XUFJMfZc0OK354G92rOhslFH69r_wZ_O_4FFV5v0GysCi8A</recordid><startdate>20161207</startdate><enddate>20161207</enddate><creator>Uedono, Akira</creator><creator>Zhao, Ming</creator><creator>Simoen, Eddy</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6224-4869</orcidid></search><sort><creationdate>20161207</creationdate><title>Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam</title><author>Uedono, Akira ; Zhao, Ming ; Simoen, Eddy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-ee4fe180436f42b74d6f426025df16f7947288b094f4014f6daa64ee7157b3d23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Carbon</topic><topic>Cations</topic><topic>Electron transfer</topic><topic>Electrons</topic><topic>Epitaxial growth</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Point defects</topic><topic>Positron beams</topic><topic>Silicon substrates</topic><topic>Trapping</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Uedono, Akira</creatorcontrib><creatorcontrib>Zhao, Ming</creatorcontrib><creatorcontrib>Simoen, Eddy</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Uedono, Akira</au><au>Zhao, Ming</au><au>Simoen, Eddy</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam</atitle><jtitle>Journal of applied physics</jtitle><date>2016-12-07</date><risdate>2016</risdate><volume>120</volume><issue>21</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 × 1017−8 × 1019 cm−3) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (CNs). The charge state of the vacancies was positive because of the electron transfer from the defects to CN-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by CN-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and CN-related acceptors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4970984</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-6224-4869</orcidid><oa>free_for_read</oa></addata></record> |
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source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Applied physics Carbon Cations Electron transfer Electrons Epitaxial growth Metalorganic chemical vapor deposition Point defects Positron beams Silicon substrates Trapping Vacancies |
title | Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam |
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