On reduction of current leakage in GaN by carbon-doping

Carbon-doping is proposed to reduce the dislocation-mediated leakage currents in the GaN buffer layers. GaN:C grown by metalorganic vapor phase epitaxy using propane shows excellent quality up to [C] = 6.7 × 1018 cm−3. Locally probing dislocations by surface scanning potential microscopy reveal a tr...

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Veröffentlicht in:	Applied physics letters 2016-11, Vol.109 (21)
Hauptverfasser:	Fariza, Aqdas, Lesnik, Andreas, Bläsing, Jürgen, Hoffmann, Marc P., Hörich, Florian, Veit, Peter, Witte, Hartmut, Dadgar, Armin, Strittmatter, André
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Buffer layers Carbon Current leakage Dislocations Doping Epitaxial growth Leakage current Metalorganic chemical vapor deposition Scanning potential microscopy
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container_title	Applied physics letters
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creator	Fariza, Aqdas Lesnik, Andreas Bläsing, Jürgen Hoffmann, Marc P. Hörich, Florian Veit, Peter Witte, Hartmut Dadgar, Armin Strittmatter, André
description	Carbon-doping is proposed to reduce the dislocation-mediated leakage currents in the GaN buffer layers. GaN:C grown by metalorganic vapor phase epitaxy using propane shows excellent quality up to [C] = 6.7 × 1018 cm−3. Locally probing dislocations by surface scanning potential microscopy reveal a transition from mostly neutral or weakly charged regions to dominantly negatively charged regions relative to the surrounding area at high doping levels. A relation between leakage currents and the relative dislocation charge state exists. Minimum leakage current is achieved if the dominant charge state of dislocation regions becomes negative against the surrounding.
doi_str_mv	10.1063/1.4968823
format	Article
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source	AIP Journals Complete; Alma/SFX Local Collection
subjects	Applied physics Buffer layers Carbon Current leakage Dislocations Doping Epitaxial growth Leakage current Metalorganic chemical vapor deposition Scanning potential microscopy
title	On reduction of current leakage in GaN by carbon-doping
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