Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors

Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various...

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Veröffentlicht in:Applied physics letters 2016-10, Vol.109 (18)
Hauptverfasser: Jiang, Guixia, Liu, Ao, Liu, Guoxia, Zhu, Chundan, Meng, You, Shin, Byoungchul, Fortunato, Elvira, Martins, Rodrigo, Shan, Fukai
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container_issue 18
container_start_page
container_title Applied physics letters
container_volume 109
creator Jiang, Guixia
Liu, Ao
Liu, Guoxia
Zhu, Chundan
Meng, You
Shin, Byoungchul
Fortunato, Elvira
Martins, Rodrigo
Shan, Fukai
description Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.
doi_str_mv 10.1063/1.4966897
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source AIP Journals Complete; Alma/SFX Local Collection
subjects Annealing
Applied physics
Atomic beam spectroscopy
Atomic force microscopy
Electric potential
Electrical measurement
Electron mobility
Indium oxides
Magnesium oxide
Metal oxides
Power consumption
Semiconductor devices
Spectrum analysis
Spin coating
Superconductors (materials)
Thermogravimetric analysis
Thin film transistors
Thin films
Transistors
X ray photoelectron spectroscopy
X-ray diffraction
title Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
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