Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various...
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Veröffentlicht in: | Applied physics letters 2016-10, Vol.109 (18) |
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creator | Jiang, Guixia Liu, Ao Liu, Guoxia Zhu, Chundan Meng, You Shin, Byoungchul Fortunato, Elvira Martins, Rodrigo Shan, Fukai |
description | Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics. |
doi_str_mv | 10.1063/1.4966897 |
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fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_4966897</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121501691</sourcerecordid><originalsourceid>FETCH-LOGICAL-c393t-c249d139c1fe862343e8b0ec8ab83fefd79ddf264ad17628c662adf5889d71b83</originalsourceid><addsrcrecordid>eNp90E1LAzEQBuAgCtbqwX-w4EkhNbPZzSZHKX5BwYN6XtJ8tKm7m5pkq_57t7ToQfA0DDy8w7wInQOZAGH0GiaFYIyL6gCNgFQVpgD8EI0IIRQzUcIxOolxNaxlTukIyWff9Mn5Dq-DVyZGo7OlWyzxW9bKRWei69vMfzptMu1MY1QKTsXM-pA1_gNvfJPkwuxFWroOW9e0WQqyiy4mH-IpOrKyieZsP8fo9e72ZfqAZ0_3j9ObGVZU0IRVXggNVCiwhrOcFtTwOTGKyzmn1lhdCa1tzgqpoWI5V4zlUtuSc6ErGMwYXexyh0feexNTvfJ96IaTdQ45lASYgEFd7pQKPsZgbL0OrpXhqwZSbxusod43ONirnY3KJbkt6QdvfPiF9Vrb__Df5G_2IYDx</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121501691</pqid></control><display><type>article</type><title>Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Jiang, Guixia ; Liu, Ao ; Liu, Guoxia ; Zhu, Chundan ; Meng, You ; Shin, Byoungchul ; Fortunato, Elvira ; Martins, Rodrigo ; Shan, Fukai</creator><creatorcontrib>Jiang, Guixia ; Liu, Ao ; Liu, Guoxia ; Zhu, Chundan ; Meng, You ; Shin, Byoungchul ; Fortunato, Elvira ; Martins, Rodrigo ; Shan, Fukai</creatorcontrib><description>Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4966897</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Annealing ; Applied physics ; Atomic beam spectroscopy ; Atomic force microscopy ; Electric potential ; Electrical measurement ; Electron mobility ; Indium oxides ; Magnesium oxide ; Metal oxides ; Power consumption ; Semiconductor devices ; Spectrum analysis ; Spin coating ; Superconductors (materials) ; Thermogravimetric analysis ; Thin film transistors ; Thin films ; Transistors ; X ray photoelectron spectroscopy ; X-ray diffraction</subject><ispartof>Applied physics letters, 2016-10, Vol.109 (18)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-c249d139c1fe862343e8b0ec8ab83fefd79ddf264ad17628c662adf5889d71b83</citedby><cites>FETCH-LOGICAL-c393t-c249d139c1fe862343e8b0ec8ab83fefd79ddf264ad17628c662adf5889d71b83</cites><orcidid>0000-0002-5385-4080</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4966897$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,782,786,796,4516,27933,27934,76394</link.rule.ids></links><search><creatorcontrib>Jiang, Guixia</creatorcontrib><creatorcontrib>Liu, Ao</creatorcontrib><creatorcontrib>Liu, Guoxia</creatorcontrib><creatorcontrib>Zhu, Chundan</creatorcontrib><creatorcontrib>Meng, You</creatorcontrib><creatorcontrib>Shin, Byoungchul</creatorcontrib><creatorcontrib>Fortunato, Elvira</creatorcontrib><creatorcontrib>Martins, Rodrigo</creatorcontrib><creatorcontrib>Shan, Fukai</creatorcontrib><title>Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors</title><title>Applied physics letters</title><description>Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.</description><subject>Annealing</subject><subject>Applied physics</subject><subject>Atomic beam spectroscopy</subject><subject>Atomic force microscopy</subject><subject>Electric potential</subject><subject>Electrical measurement</subject><subject>Electron mobility</subject><subject>Indium oxides</subject><subject>Magnesium oxide</subject><subject>Metal oxides</subject><subject>Power consumption</subject><subject>Semiconductor devices</subject><subject>Spectrum analysis</subject><subject>Spin coating</subject><subject>Superconductors (materials)</subject><subject>Thermogravimetric analysis</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Transistors</subject><subject>X ray photoelectron spectroscopy</subject><subject>X-ray diffraction</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp90E1LAzEQBuAgCtbqwX-w4EkhNbPZzSZHKX5BwYN6XtJ8tKm7m5pkq_57t7ToQfA0DDy8w7wInQOZAGH0GiaFYIyL6gCNgFQVpgD8EI0IIRQzUcIxOolxNaxlTukIyWff9Mn5Dq-DVyZGo7OlWyzxW9bKRWei69vMfzptMu1MY1QKTsXM-pA1_gNvfJPkwuxFWroOW9e0WQqyiy4mH-IpOrKyieZsP8fo9e72ZfqAZ0_3j9ObGVZU0IRVXggNVCiwhrOcFtTwOTGKyzmn1lhdCa1tzgqpoWI5V4zlUtuSc6ErGMwYXexyh0feexNTvfJ96IaTdQ45lASYgEFd7pQKPsZgbL0OrpXhqwZSbxusod43ONirnY3KJbkt6QdvfPiF9Vrb__Df5G_2IYDx</recordid><startdate>20161031</startdate><enddate>20161031</enddate><creator>Jiang, Guixia</creator><creator>Liu, Ao</creator><creator>Liu, Guoxia</creator><creator>Zhu, Chundan</creator><creator>Meng, You</creator><creator>Shin, Byoungchul</creator><creator>Fortunato, Elvira</creator><creator>Martins, Rodrigo</creator><creator>Shan, Fukai</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5385-4080</orcidid></search><sort><creationdate>20161031</creationdate><title>Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors</title><author>Jiang, Guixia ; Liu, Ao ; Liu, Guoxia ; Zhu, Chundan ; Meng, You ; Shin, Byoungchul ; Fortunato, Elvira ; Martins, Rodrigo ; Shan, Fukai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-c249d139c1fe862343e8b0ec8ab83fefd79ddf264ad17628c662adf5889d71b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Annealing</topic><topic>Applied physics</topic><topic>Atomic beam spectroscopy</topic><topic>Atomic force microscopy</topic><topic>Electric potential</topic><topic>Electrical measurement</topic><topic>Electron mobility</topic><topic>Indium oxides</topic><topic>Magnesium oxide</topic><topic>Metal oxides</topic><topic>Power consumption</topic><topic>Semiconductor devices</topic><topic>Spectrum analysis</topic><topic>Spin coating</topic><topic>Superconductors (materials)</topic><topic>Thermogravimetric analysis</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Transistors</topic><topic>X ray photoelectron spectroscopy</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jiang, Guixia</creatorcontrib><creatorcontrib>Liu, Ao</creatorcontrib><creatorcontrib>Liu, Guoxia</creatorcontrib><creatorcontrib>Zhu, Chundan</creatorcontrib><creatorcontrib>Meng, You</creatorcontrib><creatorcontrib>Shin, Byoungchul</creatorcontrib><creatorcontrib>Fortunato, Elvira</creatorcontrib><creatorcontrib>Martins, Rodrigo</creatorcontrib><creatorcontrib>Shan, Fukai</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jiang, Guixia</au><au>Liu, Ao</au><au>Liu, Guoxia</au><au>Zhu, Chundan</au><au>Meng, You</au><au>Shin, Byoungchul</au><au>Fortunato, Elvira</au><au>Martins, Rodrigo</au><au>Shan, Fukai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors</atitle><jtitle>Applied physics letters</jtitle><date>2016-10-31</date><risdate>2016</risdate><volume>109</volume><issue>18</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4966897</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-5385-4080</orcidid></addata></record> |
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subjects | Annealing Applied physics Atomic beam spectroscopy Atomic force microscopy Electric potential Electrical measurement Electron mobility Indium oxides Magnesium oxide Metal oxides Power consumption Semiconductor devices Spectrum analysis Spin coating Superconductors (materials) Thermogravimetric analysis Thin film transistors Thin films Transistors X ray photoelectron spectroscopy X-ray diffraction |
title | Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors |
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