Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization

Si0.5Ge0.5(110) surfaces were passivated and functionalized using atomic H, hydrogen peroxide (H2O2), and either tetrakis(dimethylamino)titanium (TDMAT) or titanium tetrachloride (TiCl4) and studied in situ with multiple spectroscopic techniques. To passivate the dangling bonds, atomic H and H2O2(g)...

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