Manipulating the exchange bias effect of Pb(Zr0.52Ti0.48)O3/CoFe2O4/NiO heterostructural films by electric fields

The Pb(Zr0.52Ti0.48)O3/CoFe2O4/NiO heterostructural films with exchange bias (EB) effect have been prepared on Pt/Ti/SiO2/Si wafers using a sol-gel process, and reversible manipulation of EB effect by electric fields has been realized. Compared with the exchange bias field (Heb = −75 Oe) at as-grown...

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Veröffentlicht in:	Applied physics letters 2016-10, Vol.109 (17)
Hauptverfasser:	Li, Yong-Chao, Pan, Dan-Feng, Wu, Jun, Li, Ying-bin, Wang, Guang-hou, Liu, Jun-Ming, Wan, Jian-Guo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bias Cobalt ferrites Computer storage devices Electric fields Electrons Endurance Exchanging Fatigue tests Ferroelectric materials Ferroelectricity Memory devices Modulation Nickel oxides Power consumption Silicon dioxide Sol-gel processes
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