Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

We report close to circularly polarized lasing at ℏ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic c...

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Veröffentlicht in:	Applied physics letters 2016-10, Vol.109 (17)
Hauptverfasser:	Demenev, A. A., Kulakovskii, V. D., Schneider, C., Brodbeck, S., Kamp, M., Höfling, S., Lobanov, S. V., Weiss, T., Gippius, N. A., Tikhodeev, S. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Circular polarization Gallium arsenide Lasing Optical activity Photonic crystals Quantum wells Wave plates
Online-Zugang:	Volltext
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