Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices

The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find t...

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Veröffentlicht in:	Applied physics letters 2016-09, Vol.109 (13)
Hauptverfasser:	Brivio, S., Covi, E., Serb, A., Prodromakis, T., Fanciulli, M., Spiga, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Hafnium oxide High resistance Ionic mobility Low resistance Ohmic dissipation Polarity Resistance heating Stimulation Switching Threshold voltage
Online-Zugang:	Volltext
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