Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films
This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Oh...
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| Veröffentlicht in: | Applied physics letters 2016-08, Vol.109 (5) |
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| container_title | Applied physics letters |
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| creator | Zhang, Xinyu Wan, Yimao Bullock, James Allen, Thomas Cuevas, Andres |
| description | This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication. |
| doi_str_mv | 10.1063/1.4960529 |
| format | Article |
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It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4960529</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Carrier transport ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Contact resistance ; Copper ; COPPER OXIDES ; Crystal structure ; Crystallinity ; DEPOSITION ; DOPED MATERIALS ; Electrical resistivity ; FABRICATION ; FLOW RATE ; Flow velocity ; HOLES ; Low resistance ; NITROGEN ; OPTIMIZATION ; Oxide coatings ; OXYGEN ; P-TYPE CONDUCTORS ; Photovoltaic cells ; PHYSICAL PROPERTIES ; RAMAN SPECTROSCOPY ; Silicon ; SILICON SOLAR CELLS ; Solar cells ; Spectrum analysis ; SPUTTERING ; SUBSTRATES ; X RADIATION ; X-RAY PHOTOELECTRON SPECTROSCOPY</subject><ispartof>Applied physics letters, 2016-08, Vol.109 (5)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c390t-eead4f7dd62052609e3ea8626b744677c4c779746a6cf50d2d87b84becea81613</citedby><cites>FETCH-LOGICAL-c390t-eead4f7dd62052609e3ea8626b744677c4c779746a6cf50d2d87b84becea81613</cites><orcidid>0000-0002-7951-4172</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4960529$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,4498,27901,27902,76126</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22594324$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Xinyu</creatorcontrib><creatorcontrib>Wan, Yimao</creatorcontrib><creatorcontrib>Bullock, James</creatorcontrib><creatorcontrib>Allen, Thomas</creatorcontrib><creatorcontrib>Cuevas, Andres</creatorcontrib><title>Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films</title><title>Applied physics letters</title><description>This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.</description><subject>Applied physics</subject><subject>Carrier transport</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Contact resistance</subject><subject>Copper</subject><subject>COPPER OXIDES</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>DEPOSITION</subject><subject>DOPED MATERIALS</subject><subject>Electrical resistivity</subject><subject>FABRICATION</subject><subject>FLOW RATE</subject><subject>Flow velocity</subject><subject>HOLES</subject><subject>Low resistance</subject><subject>NITROGEN</subject><subject>OPTIMIZATION</subject><subject>Oxide coatings</subject><subject>OXYGEN</subject><subject>P-TYPE CONDUCTORS</subject><subject>Photovoltaic cells</subject><subject>PHYSICAL PROPERTIES</subject><subject>RAMAN SPECTROSCOPY</subject><subject>Silicon</subject><subject>SILICON SOLAR CELLS</subject><subject>Solar cells</subject><subject>Spectrum analysis</subject><subject>SPUTTERING</subject><subject>SUBSTRATES</subject><subject>X RADIATION</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp90EtLAzEQB_AgCtbHwW8Q8KSwmtcmzVHEFxS86DmmyayNbDdrEh_99qZU9CB4GgZ-M_NnEDqi5IwSyc_pmdCStExvoQklSjWc0uk2mhBCeCN1S3fRXs4vtW0Z5xP0NIsfOEEOudjBAb5fLIPDLg7FuoJLxGNTViNgl1ZV9H0YAOfQhyrwe7B4CCXFZxgaH0fwdXAcIeH4GTzgLvTLfIB2OttnOPyu--jx-urh8raZ3d_cXV7MGsc1KQ2A9aJT3ktWk0migYOdSibnSgiplBNOKa2EtNJ1LfHMT9V8KubgKqOS8n10vNkbcwkmu1DALWrKAVwxjLVacCZ-1Zji6xvkYl7iWxpqMMMoo1JLrXRVJxvlUsw5QWfGFJY2rQwlZv1mQ833m6s93dj1SVtCHH7we0y_0Iy--w__3fwFE7aLRQ</recordid><startdate>20160801</startdate><enddate>20160801</enddate><creator>Zhang, Xinyu</creator><creator>Wan, Yimao</creator><creator>Bullock, James</creator><creator>Allen, Thomas</creator><creator>Cuevas, Andres</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-7951-4172</orcidid></search><sort><creationdate>20160801</creationdate><title>Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films</title><author>Zhang, Xinyu ; Wan, Yimao ; Bullock, James ; Allen, Thomas ; Cuevas, Andres</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c390t-eead4f7dd62052609e3ea8626b744677c4c779746a6cf50d2d87b84becea81613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Carrier transport</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Contact resistance</topic><topic>Copper</topic><topic>COPPER OXIDES</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>DEPOSITION</topic><topic>DOPED MATERIALS</topic><topic>Electrical resistivity</topic><topic>FABRICATION</topic><topic>FLOW RATE</topic><topic>Flow velocity</topic><topic>HOLES</topic><topic>Low resistance</topic><topic>NITROGEN</topic><topic>OPTIMIZATION</topic><topic>Oxide coatings</topic><topic>OXYGEN</topic><topic>P-TYPE CONDUCTORS</topic><topic>Photovoltaic cells</topic><topic>PHYSICAL PROPERTIES</topic><topic>RAMAN SPECTROSCOPY</topic><topic>Silicon</topic><topic>SILICON SOLAR CELLS</topic><topic>Solar cells</topic><topic>Spectrum analysis</topic><topic>SPUTTERING</topic><topic>SUBSTRATES</topic><topic>X RADIATION</topic><topic>X-RAY PHOTOELECTRON SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Xinyu</creatorcontrib><creatorcontrib>Wan, Yimao</creatorcontrib><creatorcontrib>Bullock, James</creatorcontrib><creatorcontrib>Allen, Thomas</creatorcontrib><creatorcontrib>Cuevas, Andres</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Xinyu</au><au>Wan, Yimao</au><au>Bullock, James</au><au>Allen, Thomas</au><au>Cuevas, Andres</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films</atitle><jtitle>Applied physics letters</jtitle><date>2016-08-01</date><risdate>2016</risdate><volume>109</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. 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| subjects | Applied physics Carrier transport CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Contact resistance Copper COPPER OXIDES Crystal structure Crystallinity DEPOSITION DOPED MATERIALS Electrical resistivity FABRICATION FLOW RATE Flow velocity HOLES Low resistance NITROGEN OPTIMIZATION Oxide coatings OXYGEN P-TYPE CONDUCTORS Photovoltaic cells PHYSICAL PROPERTIES RAMAN SPECTROSCOPY Silicon SILICON SOLAR CELLS Solar cells Spectrum analysis SPUTTERING SUBSTRATES X RADIATION X-RAY PHOTOELECTRON SPECTROSCOPY |
| title | Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films |
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