Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes
Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n = 1.2–1.25 and apparent barrier height φb = (0.59–0.63) eV. The noise measurements within th...
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| Veröffentlicht in: | Applied physics letters 2016-07, Vol.109 (3) |
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| container_title | Applied physics letters |
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| creator | Cywiński, G. Szkudlarek, K. Kruszewski, P. Yahniuk, I. Yatsunenko, S. Muzioł, G. Skierbiszewski, C. Knap, W. Rumyantsev, S. L. |
| description | Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n = 1.2–1.25 and apparent barrier height φb = (0.59–0.63) eV. The noise measurements within the frequencies range from 1 Hz to 50 kHz showed that the diodes demonstrated the superposition of 1/f and generation recombination noise. In spite of extremely small area of lateral Schottky diodes, the amplitude of noise was similar or even smaller than that for AlGaN and GaN Schottky diodes with the regular contact. This makes GaN-based lateral Schottky diodes to be very promising devices for RF and terahertz applications. |
| doi_str_mv | 10.1063/1.4958857 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_4958857</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2121706245</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-9fd4ffe489ace1d3869bda5c09178548ca15d3ca8a2cd16afa4c2e0788633c63</originalsourceid><addsrcrecordid>eNqdkE9LAzEUxIMoWKsHv8GCJ4Vt8zabTfZYirbCogd7DzF_MHW7qUlq6bc30oJ3LzMM_HjMG4RuAU8AN2QKk7qlnFN2hkaAGSsJAD9HI4wxKZuWwiW6inGdI60IGaFl5_eFDeZrZwZ1KAbvoincUKS9L7XbmCE6P8i-6GUyIftCvkxnfdbiTX34lD4PhXZem3iNLqzso7k5-Ritnh5X82XZvS6e57OuVKRiqWytrq01NW-lMqAJb9p3LanCLTBOa64kUE2U5LJSGhppZa0qgxnnDSGqIWN0dzy7DT53jkms_S7khlFUUAHDTVXTTN0fKRV8jMFYsQ1uI8NBABa_OwkQp50y-3Bko3JJpvzu_-BvH_5AsdWW_ACK0nYL</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121706245</pqid></control><display><type>article</type><title>Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Cywiński, G. ; Szkudlarek, K. ; Kruszewski, P. ; Yahniuk, I. ; Yatsunenko, S. ; Muzioł, G. ; Skierbiszewski, C. ; Knap, W. ; Rumyantsev, S. L.</creator><creatorcontrib>Cywiński, G. ; Szkudlarek, K. ; Kruszewski, P. ; Yahniuk, I. ; Yatsunenko, S. ; Muzioł, G. ; Skierbiszewski, C. ; Knap, W. ; Rumyantsev, S. L.</creatorcontrib><description>Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n = 1.2–1.25 and apparent barrier height φb = (0.59–0.63) eV. The noise measurements within the frequencies range from 1 Hz to 50 kHz showed that the diodes demonstrated the superposition of 1/f and generation recombination noise. In spite of extremely small area of lateral Schottky diodes, the amplitude of noise was similar or even smaller than that for AlGaN and GaN Schottky diodes with the regular contact. This makes GaN-based lateral Schottky diodes to be very promising devices for RF and terahertz applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4958857</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Applied physics ; Gallium nitrides ; Noise ; Noise generation ; Schottky diodes ; Superposition (mathematics)</subject><ispartof>Applied physics letters, 2016-07, Vol.109 (3)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-9fd4ffe489ace1d3869bda5c09178548ca15d3ca8a2cd16afa4c2e0788633c63</citedby><cites>FETCH-LOGICAL-c327t-9fd4ffe489ace1d3869bda5c09178548ca15d3ca8a2cd16afa4c2e0788633c63</cites><orcidid>0000-0003-3616-8756</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4958857$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,781,785,795,4513,27929,27930,76389</link.rule.ids></links><search><creatorcontrib>Cywiński, G.</creatorcontrib><creatorcontrib>Szkudlarek, K.</creatorcontrib><creatorcontrib>Kruszewski, P.</creatorcontrib><creatorcontrib>Yahniuk, I.</creatorcontrib><creatorcontrib>Yatsunenko, S.</creatorcontrib><creatorcontrib>Muzioł, G.</creatorcontrib><creatorcontrib>Skierbiszewski, C.</creatorcontrib><creatorcontrib>Knap, W.</creatorcontrib><creatorcontrib>Rumyantsev, S. L.</creatorcontrib><title>Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes</title><title>Applied physics letters</title><description>Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n = 1.2–1.25 and apparent barrier height φb = (0.59–0.63) eV. The noise measurements within the frequencies range from 1 Hz to 50 kHz showed that the diodes demonstrated the superposition of 1/f and generation recombination noise. In spite of extremely small area of lateral Schottky diodes, the amplitude of noise was similar or even smaller than that for AlGaN and GaN Schottky diodes with the regular contact. This makes GaN-based lateral Schottky diodes to be very promising devices for RF and terahertz applications.</description><subject>Aluminum gallium nitrides</subject><subject>Applied physics</subject><subject>Gallium nitrides</subject><subject>Noise</subject><subject>Noise generation</subject><subject>Schottky diodes</subject><subject>Superposition (mathematics)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqdkE9LAzEUxIMoWKsHv8GCJ4Vt8zabTfZYirbCogd7DzF_MHW7qUlq6bc30oJ3LzMM_HjMG4RuAU8AN2QKk7qlnFN2hkaAGSsJAD9HI4wxKZuWwiW6inGdI60IGaFl5_eFDeZrZwZ1KAbvoincUKS9L7XbmCE6P8i-6GUyIftCvkxnfdbiTX34lD4PhXZem3iNLqzso7k5-Ritnh5X82XZvS6e57OuVKRiqWytrq01NW-lMqAJb9p3LanCLTBOa64kUE2U5LJSGhppZa0qgxnnDSGqIWN0dzy7DT53jkms_S7khlFUUAHDTVXTTN0fKRV8jMFYsQ1uI8NBABa_OwkQp50y-3Bko3JJpvzu_-BvH_5AsdWW_ACK0nYL</recordid><startdate>20160718</startdate><enddate>20160718</enddate><creator>Cywiński, G.</creator><creator>Szkudlarek, K.</creator><creator>Kruszewski, P.</creator><creator>Yahniuk, I.</creator><creator>Yatsunenko, S.</creator><creator>Muzioł, G.</creator><creator>Skierbiszewski, C.</creator><creator>Knap, W.</creator><creator>Rumyantsev, S. L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3616-8756</orcidid></search><sort><creationdate>20160718</creationdate><title>Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes</title><author>Cywiński, G. ; Szkudlarek, K. ; Kruszewski, P. ; Yahniuk, I. ; Yatsunenko, S. ; Muzioł, G. ; Skierbiszewski, C. ; Knap, W. ; Rumyantsev, S. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-9fd4ffe489ace1d3869bda5c09178548ca15d3ca8a2cd16afa4c2e0788633c63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Aluminum gallium nitrides</topic><topic>Applied physics</topic><topic>Gallium nitrides</topic><topic>Noise</topic><topic>Noise generation</topic><topic>Schottky diodes</topic><topic>Superposition (mathematics)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cywiński, G.</creatorcontrib><creatorcontrib>Szkudlarek, K.</creatorcontrib><creatorcontrib>Kruszewski, P.</creatorcontrib><creatorcontrib>Yahniuk, I.</creatorcontrib><creatorcontrib>Yatsunenko, S.</creatorcontrib><creatorcontrib>Muzioł, G.</creatorcontrib><creatorcontrib>Skierbiszewski, C.</creatorcontrib><creatorcontrib>Knap, W.</creatorcontrib><creatorcontrib>Rumyantsev, S. L.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cywiński, G.</au><au>Szkudlarek, K.</au><au>Kruszewski, P.</au><au>Yahniuk, I.</au><au>Yatsunenko, S.</au><au>Muzioł, G.</au><au>Skierbiszewski, C.</au><au>Knap, W.</au><au>Rumyantsev, S. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes</atitle><jtitle>Applied physics letters</jtitle><date>2016-07-18</date><risdate>2016</risdate><volume>109</volume><issue>3</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n = 1.2–1.25 and apparent barrier height φb = (0.59–0.63) eV. The noise measurements within the frequencies range from 1 Hz to 50 kHz showed that the diodes demonstrated the superposition of 1/f and generation recombination noise. In spite of extremely small area of lateral Schottky diodes, the amplitude of noise was similar or even smaller than that for AlGaN and GaN Schottky diodes with the regular contact. This makes GaN-based lateral Schottky diodes to be very promising devices for RF and terahertz applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4958857</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-3616-8756</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2016-07, Vol.109 (3) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum gallium nitrides Applied physics Gallium nitrides Noise Noise generation Schottky diodes Superposition (mathematics) |
| title | Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes |
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